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Register a new userElectronic Stopping of Slow Protons in Transition and Rare Earth Metals: Breakdown of the Free Electron Gas Concept
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The electronic stopping cross sections (SCS) of Ta and Gd for slow protons have been investigated experimentally. The data are compared to the results for Pt and Au to learn how electronic stopping in transition and rare earth metals correlates with features of the electronic band structures. The extraordinarily high SCS observed for protons in Ta and Gd cannot be understood in terms of a free electron gas model, but are related to the high densities of both occupied and unoccupied electronic states in these metals.
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Electronic stopping of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2, and Ta2O5 was investigated experimentally. As a comparison of the resulting stopping cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stopping of slow protons does not correlate with electronic properties of the specific material such as band gap energies. Instead, the oxygen 2p states are decisive, as corroborated by density functional theory calculations of the electronic densities of states. Hence, at low ion velocities the SCS of an oxide primarily scales with its oxygen density.
The design and synthesis of targeted functional materials have been a long-term goal for material scientists. Although a universal design strategy is difficult to generate for all types of materials, however, it is still helpful for a typical family of materials to have such design rules. Herein, we incorporated several significant chemical and physical factors regarding magnetism, such as structure type, atom distance, spin-orbit coupling, and successfully synthesized a new rare-earth-free ferromagnet, MnPt5As, for the first time. MnPt5As can be prepared by using high-temperature pellet methods. According to X-ray diffraction results, MnPt5As crystallizes in a tetragonal unit cell with the space group P4/mmm (Pearson symbol tP7). Magnetic measurements on MnPt5As confirm ferromagnetism in this phase with a Curie temperature of ~301 K and a saturated moment of 3.5 uB per formula. Evaluation by applying the Stoner Criterion also indicates that MnPt5As is susceptible to ferromagnetism. Electronic structure calculations using the WIEN2k program with local spin density approximation imply that the spontaneous magnetization of this phase arises primarily from the hybridization of d orbitals on both Mn and Pt atoms. The theoretical assessments are consistent with the experimental results. Moreover, the spin-orbit coupling effects heavily influence on magnetic moments in MnPt5As. MnPt5As is the first high-performance magnetic material in this structure type. The discovery of MnPt5As offers a platform to study the interplay between magnetism and structure.
Information technology demands continuous increase of data-storage density. In high-density magnetic recording media, the large magneto-crystalline anisotropy (MCA) stabilizes the stored information against decay through thermal fluctuations. In the latest generation storage media, MCA is so large that magnetic order needs to be transiently destroyed by heat to enable bit writing. Here we show an alternative approach to control high-anisotropy magnets: With ultrashort laser pulses the anisotropy itself can be manipulated via electronic state excitations. In rare-earth materials like terbium metal, magnetic moment and high MCA both originate from the 4f electronic state. Following infrared laser excitation 5d-4f electron-electron scattering processes lead to selective orbital excitations that change the 4f orbital occupation and significantly alter the MCA. Besides these excitations within the 4f multiplet, 5d-4f electron transfer causes a transient change of the 4f occupation number, which, too, strongly alters the MCA. Such MCA change cannot be achieved by heating: The material would rather be damaged than the 4f configuration modified. Our results show a way to overcome this limitation for a new type of efficient magnetic storage medium. Besides potential technological relevance, the observation of MCA-changing excitations also has implications for a general understanding of magnetic dynamics processes on ultrashort time scales, where the 4f electronic state affects the angular momentum transfer between spin system and lattice.
The electronic structures of substitutional rare-earth (RE) impurities in GaAs and cubic GaN are calculated. The total energy is evaluated with the self-interaction corrected local spin density approximation, by which several configurations of the open 4f shell of the rare-earth ion may be investigated. The defects are modelled by supercells of type REGa$_{n-1}$As$_n$, for n=4, 8 and 16. The preferred defect is the rare-earth substituting Ga, for which case the rare-earth valency in intrinsic material is found to be trivalent in all cases except Ce and Pr in GaN. The 3+ --> 2+ f-level is found above the theoretical conduction band edge in all cases and within the experimental gap only for Eu, Tm and Yb in GaAs and for Eu in GaN. The exchange interaction of the rare-earth impurity with the states at both the valence band maximum and the conduction band minimum is weak, one to two orders of magnitude smaller than that of Mn impurities. Hence the coupling strength is insufficient to allow for ferromagnetic ordering of dilute impurities, except at very low temperatures.
Doping NiFe by heavy rare earth atoms alters the magnetic relaxation properties of this material drastically. We show that this effect can be well explained by the slow relaxing impurity mechanism. This process is a consequence of the anisotropy of the on site exchange interaction between the 4f magnetic moments and the conduction band. As expected from this model the magnitude of the damping effect scales with the anisotropy of the exchange interaction and increases by an order of magnitude at low temperatures. In addition our measurements allow us to determine the relaxation time of the 4f electrons as a function of temperature.
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