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Register a new userStrain bursts in plastically deforming Molybdenum micro- and nanopillars
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Plastic deformation of micron and sub-micron scale specimens is characterized by intermittent sequences of large strain bursts (dislocation avalanches) which are separated by regions of near-elastic loading. In the present investigation we perform a statistical characterization of strain bursts observed in stress-controlled compressive deformation of monocrystalline Molybdenum micropillars. We characterize the bursts in terms of the associated elongation increments and peak deformation rates, and demonstrate that these quantities follow power-law distributions that do not depend on specimen orientation or stress rate. We also investigate the statistics of stress increments in between the bursts, which are found to be Weibull distributed and exhibit a characteristic size effect. We discuss our findings in view of observations of deformation bursts in other materials, such as face-centered cubic and hexagonal metals.
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We demonstrate, through 3-dimensional discrete dislocation dynamics simulations, that the com- plex dynamical response of nano and micro crystals to external constraints can be tuned. Under load rate control, strain bursts are shown to exhibit scale-free avalanche statistics, similar to critical phenomena in many physical systems. For the other extreme of displacement rate control, strain burst response transitions to quasi-periodic oscillations, similar to stick-slip earthquakes. External load mode control is shown to enable a qualitative transition in the complex collective dynamics of dislocations from self-organized criticality to quasi-periodic oscillations.
We depict the use of x-ray diffraction as a tool to directly probe the strain status in rolled-up semiconductor tubes. By employing continuum elasticity theory and a simple model we are able to simulate quantitatively the strain relaxation in perfect crystalline III-V semiconductor bi- and multilayers as well as in rolled-up layers with dislocations. The reduction in the local elastic energy is evaluated for each case. Limitations of the technique and theoretical model are discussed in detail.
Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.
Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order below TM = 40 K and 100 K in bulk semiconducting TMDs 2H-MoTe2 and 2H-MoSe2, respectively, by means of muon spin-rotation (muSR), scanning tunneling microscopy (STM), as well as density functional theory (DFT) calculations. The muon spin rotation measurements show the presence of a large and homogeneous internal magnetic fields at low temperatures in both compounds indicative of long-range magnetic order. DFT calculations show that this magnetism is promoted by the presence of defects in the crystal. The STM measurements show that the vast majority of defects in these materials are metal vacancies and chalcogen-metal antisites which are randomly distributed in the lattice at the sub-percent level. DFT indicates that the antisite defects are magnetic with a magnetic moment in the range of 0.9-2.8 mu_B. Further, we find that the magnetic order stabilized in 2H-MoTe2 and 2H-MoSe2 is highly sensitive to hydrostatic pressure. These observations establish 2H-MoTe2 and 2H-MoSe2 as a new class of magnetic semiconductors and opens a path to studying the interplay of 2D physics and magnetism in these interesting semiconductors.
Au/Co/Au nanopillars fabricated by colloidal lithography of continuous trilayers exhibit and enhanced coercive field and the appearance of an exchange bias field with respect to the continuous layers. This is attributed to the lateral oxidation of the Co interlayer that appears upon disc fabrication. The dependence of the exchange bias field on the Co nanodots size and on the oxidation degree is analyzed and its microscopic origin clarified by means of Monte Carlo simulations based on a model of a cylindrical dot with lateral core/shell structure.
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