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Register a new userMagnetism in Semiconducting Molybdenum Dichalcogenides
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Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order below TM = 40 K and 100 K in bulk semiconducting TMDs 2H-MoTe2 and 2H-MoSe2, respectively, by means of muon spin-rotation (muSR), scanning tunneling microscopy (STM), as well as density functional theory (DFT) calculations. The muon spin rotation measurements show the presence of a large and homogeneous internal magnetic fields at low temperatures in both compounds indicative of long-range magnetic order. DFT calculations show that this magnetism is promoted by the presence of defects in the crystal. The STM measurements show that the vast majority of defects in these materials are metal vacancies and chalcogen-metal antisites which are randomly distributed in the lattice at the sub-percent level. DFT indicates that the antisite defects are magnetic with a magnetic moment in the range of 0.9-2.8 mu_B. Further, we find that the magnetic order stabilized in 2H-MoTe2 and 2H-MoSe2 is highly sensitive to hydrostatic pressure. These observations establish 2H-MoTe2 and 2H-MoSe2 as a new class of magnetic semiconductors and opens a path to studying the interplay of 2D physics and magnetism in these interesting semiconductors.
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Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve the material by giving it a qualitatively new physical property: magnetism. The dislocations studied all have a substantial magnetic moment of ~1 Bohr magneton. In contrast, dislocations in other well-studied 2D materials are typically non-magnetic. GBs composed of pentagon-heptagon pairs interact ferromagnetically and transition from semiconductor to half-metal or metal as a function of tilt angle and/or doping level. When the tilt angle exceeds 47{deg} the structural energetics favor square-octagon pairs and the GB becomes an antiferromagnetic semiconductor. These exceptional magnetic properties arise from an interplay of dislocation-induced localized states, doping, and locally unbalanced stoichiometry. Purposeful engineering of topological GBs may be able to convert MX2 into a promising 2D magnetic semiconductor.
RuGe, a diamagnetic small-band gap semiconductor, and CoGe, a nonmagnetic semimetal, are both isostructural to the Kondo insulator FeSi and the skyrmion lattice host MnSi. Here, we have explored the magnetic and transport properties of Co-doped RuGe: Ru$_{1-x}$Co$_x$Ge. For small values of $x$, a magnetic ground state emerges with $T_{c}approx$ 5 $-$ 9 K, which is accompanied by a moderate decrease in electrical resistivity and a Seebeck coefficient that indicates electron-like charge carriers. The magnetization, magnetoresistance, and the specific heat capacity all resemble that of Fe$_{1-x}$Co$_x$Si for similar Co substitution levels, suggesting that Ru$_{1-x}$Co$_x$Ge hosts equally as interesting magnetic and charge carrier transport properties.
Assessing atomic defect states and their ramifications on the electronic properties of two dimensional van der Waals semiconducting transition metal dichalcogenides (SC TMDs) is the primary task to expedite multi disciplinary efforts in the promotion of next generation electrical and optical device applications utilizing these low dimensional materials. Here, with electron tunneling and optical spectroscopy measurements with density functional theory, we spectroscopically locate the midgap states from chalcogen atom vacancies in four representative monolayer SC TMDs (MoS2, WS2, MoSe2, WSe2), and carefully analyze the similarities and dissimilarities of the atomic defects in four distinctive materials regarding the physical origins of the missing chalcogen atoms and the implications to SC mTMD properties. In addition, we address both quasiparticle and optical energy gaps of the SC mTMD films and find out many body interactions significantly enlarge the quasiparticle energy gaps and excitonic binding energies, when the semiconducting monolayers are encapsulated by non interacting hexagonal boron nitride layers.
We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs. holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e.g. Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system, but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon.
The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced doping is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the $mu$W/$mu$m$^2$ range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy.
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