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Register a new userMeasurement Technique for Elastic and Mechanical Properties of Polycrystalline Silicon-Germanium Films Using Surface Acoustic Waves and Projection Masks
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EDA Publishing Association
Publication date
2007
fields
Informatics Engineering
and research's language is
English
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Using Rayleigh surface acoustic waves (SAW), the Youngs modulus, the density and the thickness of polycrystalline Silicon-Germanium (SiGe) films deposited on silicon and SiO2 were measured, in excellent agreement with theory. The dispersion curve of the propagating SAW is calculated with a Boundary Element Method (BEM)-Model based on Greens functions. The propagating SAW is generated with a nanosecond laser in a narrowband scheme projecting stripes from a mask on the surface of the sample. For this purpose a glass mask and a liquid crystal display (LCD) mask are used. The slope of the SAW is then measured using a probe beam setup. From the wavelength of the mask and the frequency of the measured SAW, the dispersion curve is determined point by point. Fitting the BEM-Model to the measured nonlinear dispersion curve provides several physical parameters simultaneously. In the present work this is demonstrated for the Youngs modulus, the density and the thickness of SiGe films. The results from the narrowband scheme measurement are in excellent agreement with separated measurements of the thickness (profilometer), the density (balance) and the Youngs modulus (nanoindenter).
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Core-shell nanowires made of Si and Ge can be grown experimentally with excellent control for different sizes of both core and shell. We have studied the structural properties of Si/Ge and Ge/Si core-shell nanowires aligned along the $[110]$ direction, with diameters up to 10.2~nm and varying core to shell ratios, using linear scaling Density Functional Theory (DFT). We show that Vegards law, which is often used to predict the axial lattice constant, can lead to an error of up to 1%, underlining the need for a detailed emph{ab initio} atomistic treatment of the nanowire structure. We analyse the character of the intrinsic strain distribution and show that, regardless of the composition or bond direction, the Si core or shell always expands. In contrast, the strain patterns in the Ge shell or core are highly sensitive to the location, composition and bond direction. The highest strains are found at heterojunction interfaces and the surfaces of the nanowires. This detailed understanding of the atomistic structure and strain paves the way for studies of the electronic properties of core-shell nanowires and investigations of doping and structure defects.
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