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Register a new userAverage Density of States in Disordered Graphene systems
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In this paper, the average density of states (ADOS) with a binary alloy disorder in disordered graphene systems are calculated based on the recursion method. We observe an obvious resonant peak caused by interactions with surrounding impurities and an anti-resonance dip in ADOS curves near the Dirac point. We also find that the resonance energy (Er) and the dip position are sensitive to the concentration of disorders (x) and their on-site potentials (v). An linear relation, not only holds when the impurity concentration is low but this relation can be further extended to high impurity concentration regime with certain constraints. We also calculate the ADOS with a finite density of vacancies and compare our results with the previous theoretical results.
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We calculate the average single particle density of states in graphene with disorder due to impurity potentials. For unscreened short-ranged impurities, we use the non-self-consistent and self-consistent Born and $T$-matrix approximations to obtain the self-energy. Among these, only the self-consistent $T$-matrix approximation gives a non-zero density of states at the Dirac point. The density of states at the Dirac point is non-analytic in the impurity potential. For screened short-ranged and charged long-range impurity potentials, the density of states near the Dirac point typically increases in the presence of impurities, compared to that of the pure system.
We study two lattice models, the honeycomb lattice (HCL) and a special square lattice (SQL), both reducing to the Dirac equation in the continuum limit. In the presence of disorder (gaussian potential disorder and random vector potential), we investigate the behaviour of the density of states (DOS) numerically and analytically. While an upper bound can be derived for the DOS on the SQL at the Dirac point, which is also confirmed by numerical calculations, no such upper limit exists for the HCL in the presence of random vector potential. A careful investigation of the lowest eigenvalues indeed indicate, that the DOS can possibly be divergent at the Dirac point on the HCL. In spite of sharing a common continuum limit, these lattice models exhibit different behaviour.
Motivated by recent high-resolution scanning tunneling microscopy (STM) experiments in the quantum Hall regime both on massive two-dimensional electron gas and on graphene, we consider theoretically the disorder averaged nonlocal correlations of the local density of states (LDoS) for electrons moving in a smooth disordered potential in the presence of a high magnetic field. The intersection of two quantum cyclotron rings around the two different positions of the STM tip, correlated by the local disorder, provides peaks in the spatial dispersion of the LDoS-LDoS correlations when the intertip distance matches the sum of the two quantum Larmor radii. The energy dependence displays also complex behavior: for the local LDoS-LDoS average (i.e., at coinciding tip positions), sharp positive correlations are obtained for tip voltages near Landau level, and weak anticorrelations otherwise.
We analyze the nature of the single particle states, away from the Dirac point, in the presence of long-range charge impurities in a tight-binding model for electrons on a two-dimensional honeycomb lattice which is of direct relevance for graphene. For a disorder potential $V(vec{r})=V_0exp(-|vec{r}-vec{r}_{imp}|^2/xi^2)$, we demonstrate that not only the Dirac state but all the single particle states remain extended for weak enough disorder. Based on our numerical calculations of inverse participation ratio, dc conductivity, diffusion coefficient and the localization length from time evolution dynamics of the wave packet, we show that the threshold $V_{th}$ required to localize a single particle state of energy $E(vec{k})$ is minimum for the states near the band edge and is maximum for states near the band center, implying a mobility edge starting from the band edge for weak disorder and moving towards the band center as the disorder strength increases. This can be explained in terms of the low energy Hamiltonian at any point $vec{k}$ which has the same nature as that at the Dirac point. From the nature of the eigenfunctions it follows that a weak long range impurity will cause weak anti localization effects, which can be suppressed, giving localization if the strength of impurities is sufficiently large to cause inter-valley scattering. The inter valley spacing $2|vec{k}|$ increases as one moves in from the band edge towards the band center, which is reflected in the behavior of $V_{th}$ and the mobility edge.
Using Bogoliubov-de Gennes (BdG) equations we numerically calculate the disorder averaged density of states of disordered semiconductor nanowires driven into a putative topological p-wave superconducting phase by spin-orbit coupling, Zeeman spin splitting and s-wave superconducting proximity effect induced by a nearby superconductor. Comparing with the corresponding theoretical self-consistent Born approximation (SCBA) results treating disorder effects, we comment on the topological phase diagram of the system in the presence of increasing disorder. Although disorder strongly suppresses the zero-bias peak (ZBP) associated with the Majorana zero mode, we find some clear remnant of a ZBP even when the topological gap has essentially vanished in the SCBA theory because of disorder. We explicitly compare effects of disorder on the numerical density of states in the topological and trivial phases.
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