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Register a new userDensity of states of disordered topological superconductor-semiconductor hybrid nanowires
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Using Bogoliubov-de Gennes (BdG) equations we numerically calculate the disorder averaged density of states of disordered semiconductor nanowires driven into a putative topological p-wave superconducting phase by spin-orbit coupling, Zeeman spin splitting and s-wave superconducting proximity effect induced by a nearby superconductor. Comparing with the corresponding theoretical self-consistent Born approximation (SCBA) results treating disorder effects, we comment on the topological phase diagram of the system in the presence of increasing disorder. Although disorder strongly suppresses the zero-bias peak (ZBP) associated with the Majorana zero mode, we find some clear remnant of a ZBP even when the topological gap has essentially vanished in the SCBA theory because of disorder. We explicitly compare effects of disorder on the numerical density of states in the topological and trivial phases.
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Motivated by recent experiments searching for Majorana zero modes in tripartite semiconductor nanowires with epitaxial superconductor and ferromagnetic-insulator layers, we explore the emergence of topological superconductivity in such devices for paradigmatic arrangements of the three constituents. Accounting for the competition between magnetism and superconductivity, we treat superconductivity self consistently and describe the electronic properties, including the superconducting and ferromagnetic proximity effects, within a direct wave-function approach. We conclude that the most viable mechanism for topological superconductivity relies on a superconductor-semiconductor-ferromagnet arrangement of the constituents, in which spin splitting and superconductivity are independently induced in the semiconductor by proximity and superconductivity is only weakly affected by the ferromagnetic insulator.
Recent observations of a zero bias conductance peak in tunneling transport measurements in superconductor--semiconductor nanowire devices provide evidence for the predicted zero--energy Majorana modes, but not the conclusive proof for their existence. We establish that direct observation of a splitting of the zero bias conductance peak can serve as the smoking gun evidence for the existence of the Majorana mode. We show that the splitting has an oscillatory dependence on the Zeeman field (chemical potential) at fixed chemical potential (Zeeman field). By contrast, when the density is constant rather than the chemical potential -- the likely situation in the current experimental set-ups -- the splitting oscillations are generically suppressed. Our theory predicts the conditions under which the splitting oscillations can serve as the smoking gun for the experimental confirmation of the elusive Majorana mode.
Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. We report electrical measurements on InSb nanowires contacted with one normal (Au) and one superconducting electrode (NbTiN). Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields of order 100 mT we observe bound, mid-gap states at zero bias voltage. These bound states remain fixed to zero bias even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.
We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of $mu approx 3200,mathrm{cm^2/Vs}$ for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, $mathcal{T} approx 0.75 $, gate voltage tunable switching current with a product of critical current and normal state resistance, $I_{mathrm{C}}R_{mathrm{N}} approx 83,mathrm{mu V}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.
Motivated by a recent experimental report[1] claiming the likely observation of the Majorana mode in a semiconductor-superconductor hybrid structure[2,3,4,5], we study theoretically the dependence of the zero bias conductance peak associated with the zero-energy Majorana mode in the topological superconducting phase as a function of temperature, tunnel barrier potential, and a magnetic field tilted from the direction of the wire for realistic wires of finite lengths. We find that higher temperatures and tunnel barriers as well as a large magnetic field in the direction transverse to the wire length could very strongly suppress the zero-bias conductance peak as observed in Ref.[1]. We also show that a strong magnetic field along the wire could eventually lead to the splitting of the zero bias peak into a doublet with the doublet energy splitting oscillating as a function of increasing magnetic field. Our results based on the standard theory of topological superconductivity in a semiconductor hybrid structure in the presence of proximity-induced superconductivity, spin-orbit coupling, and Zeeman splitting show that the recently reported experimental data are generally consistent with the existing theory that led to the predictions for the existence of the Majorana modes in the semiconductor hybrid structures in spite of some apparent anomalies in the experimental observations at first sight. We also make several concrete new predictions for future observations regarding Majorana splitting in finite wires used in the experiments.
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