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Register a new userTheory of a Carbon-Nanotube Polarization Switch
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Recently, it was suggested that the polarization dependence of light absorption to a single-walled carbon nanotube is altered by carrier doping. We specify theoretically the doping level at which the polarization anisotropy is reversed by plasmon excitation. The plasmon energy is mainly determined by the diameter of a nanotube, because pseudospin makes the energy independent of the details of the band structure. We find that the effect of doping on the Coulomb interaction appears through the screened exchange energy, which can be observed as changes in the absorption peak positions. Our results strongly suggest the possibility that oriented nanotubes function as a polarization switch.
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Electronic transport through a single-wall metallic carbon nanotube weakly coupled to one ferromagnetic and one nonmagnetic lead is analyzed in the sequential tunneling limit. It is shown that both the spin and charge currents flowing through such systems are highly asymmetric with respect to the bias reversal. As a consequence, nanotubes coupled to one nonmagnetic and one ferromagnetic lead can be effectively used as spin diodes whose functionality can be additionally controlled by a gate voltage.
While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential increase in Off-current with drain voltage, due to modulation of the Schottky barriers at both the source and drain contact. We illustrate this with results for bottom-gated ambipolar CNFETs with oxides of 2 and 5 nm, and give an explicit scaling rule for the drain voltage. Above the drain voltage limit, the Off-current becomes large and has equal electron and hole contributions. This allows the recently reported light emission from appropriately biased CNFETs.
Healing of a hole in a carbon nanotube under electron irradiation in HRTEM at room temperature is demonstrated using molecular dynamics simulations with the CompuTEM algorithm. Formation of an amorphous patch is observed in all simulation runs. The amorphous patch is formed in the absence of external carbon adatoms only via reconstruction of the carbon bond network. It consists mainly of 5-, 6- and 7-membered rings and causes a small bottleneck. In addition, further growth of the initial amorphous patch under electron irradiation takes place. Two-coordinated atoms are found to play a crucial role in the latter process, analogous to autocatalisys of rearrangements of rings in fullerenes. The principal rearrangements in the presence of two-coordinated atoms can be described as generalized sp-defect migration: a bond is broken between two three-coordinated atoms and one of them forms a new bond with a nearby two-coordinated atom. If the new and former two-coordinated atoms are not bonded, the reaction leads both to displacement of the sp defect and changes in rings of the sp$^2$ carbon structure. Migration by hopping of two-coordinated atoms and other reactions involving simultaneous breakage of two bonds are also detected but much rarely. Long-living two-coordinated atoms in the patch structure and related fast growth of the patch are observed in more than half of the simulation runs. Since the amorphous patch and bottleneck affect the electronic properties of the nanotube, such nanotubes can be perspective for nanoelectronic applications.
A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nanotubes results in ambipolar transport behavior with negligible hysteresis. The Hooges constant of the suspended CNT-FETs (2.6 x 10-3) is about 20 times lower than for control CNT-FETs on SiO2 (5.6 x 10-2).
Often a modification of microscopic symmetry in a system can result in a dramatic change in its macroscopic properties. Here we report that symmetry breaking by a tube-threading magnetic field can drastically increase the photoluminescence quantum yield of semiconducting single-walled carbon nanotubes, by as much as a factor of six, at low temperatures. To explain this striking connection between seemingly unrelated properties, we have developed a comprehensive theoretical model based on magnetic-field-dependent one-dimensional exciton band structure and the interplay of strong Coulomb interactions and the Aharonov-Bohm effect. This conclusively explains our data as the first experimental observation of dark excitons 5-10 meV below the bright excitons in single-walled carbon nanotubes. We predict that this quantum yield increase can be made much larger in disorder-free samples.
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