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Register a new userOrbital magnetization and its effect in antiferromagnets on the distorted fcc lattice
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We study the intrinsic orbital magnetization (OM) in antiferromagnets on the distorted face-centered-cubic lattice. The combined lattice distortion and spin frustration induce nontrivial $k$-space Chern invariant, which turns to result in profound effects on the OM properties. We derive a specific relation between the OM and the Hall conductivity, according to which it is found that the intrinsic OM vanishes when the electron chemical potential lies in the Mott gap. The distinct behavior of the intrinsic OM in the metallic and insulating regions is shown. The Berry phase effects on the thermoelectric transport is also discussed.
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Motivated by a recent experiment on volborthite, a typical spin-$1/2$ antiferromagnet with a kagom{e} lattice structure, we study the magnetization process of a classical Heisenberg model on a spatially distorted kagom{e} lattice using the Monte Carlo (MC) method. We find a distortion-induced magnetization step at low temperatures and low magnetic fields. The magnitude of this step is given by $Delta m_z=left|1-alpharight|/3alpha$ at zero temperature, where $alpha$ denotes the spatial anisotropy in exchange constants. The magnetization step signals a first-order transition at low temperatures, between two phases distinguished by distinct and well-developed short-range spin correlations, one characterized by spin alignment of a local $120^{circ}$ structure with a $sqrt{3}timessqrt{3}$ period, and the other by a partially spin-flopped structure. We point out the relevance of our results to the unconventional steps observed in volborthite.
Response properties that are purely intrinsic to physical systems are of paramount importance in physics research, as they probe fundamental properties of band structures and allow quantitative calculation and comparison with experiment. For anomalous Hall transport in magnets, an intrinsic effect can appear at the second order to the applied electric field. We show that this intrinsic second-order anomalous Hall effect is associated with an intrinsic band geometric property -- the dipole moment of Berry-connection polarizability (BCP) in momentum space. The effect has scaling relation and symmetry constraints that are distinct from the previously studied extrinsic contributions. Particularly, in antiferromagnets with $mathcal{PT}$ symmetry, the intrinsic effect dominates. Combined with first-principles calculations, we demonstrate the first quantitative evaluation of the effect in the antiferromagnet Mn$_{2}$Au. We show that the BCP dipole and the resulting intrinsic second-order conductivity are pronounced around band near degeneracies. Importantly, the intrinsic response exhibits sensitive dependence on the N{e}el vector orientation with a $2pi$ periodicity, which offers a new route for electric detection of the magnetic order in $mathcal{PT}$-invariant antiferromagnets.
Topological insulators represent a new quantum state of matter that are insulating in the bulk but metallic on the edge or surface. In the Dirac surface state, it is well-established that the electron spin is locked with the crystal momentum. Here we report a new phenomenon of the spin texture locking with the orbital texture in a topological insulator Bi2Se3. We observe light-polarization-dependent spin texture of both the upper and lower Dirac cones that constitutes strong evidence of the orbital-dependent spin texture in Bi2Se3. The different spin texture detected in variable polarization geometry is the manifestation of the spin-orbital texture in the initial state combined with the photoemission matrix element effects. Our observations provide a new orbital degree of freedom and a new way of light manipulation in controlling the spin structure of the topological insulators that are important for their future applications in spin-related technologies.
Based on standard perturbation theory, we present a full quantum derivation of the formula for the orbital magnetization in periodic systems. The derivation is generally valid for insulators with or without a Chern number, for metals at zero or finite temperatures, and at weak as well as strong magnetic fields. The formula is shown to be valid in the presence of electron-electron interaction, provided the one-electron energies and wave functions are calculated self-consistently within the framework of the exact current and spin density functional theory.
The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K and K valleys, having Berry curvatures with opposite signs, and thus vanishing anomalous Hall effect in this system. Here we report the experimental realization of asymmetrical distribution of Berry curvature in a single valley in monolayer WSe2 through applying uniaxial strain to break C3v symmetry. As a result, although the Berry curvature itself is still opposite in K and K valleys, the two valleys would contribute equally to nonzero Berry curvature dipole. Upon applying electric field, the emergent Berry curvature dipole would lead to an out-of-plane orbital magnetization, which further induces an anomalous Hall effect with a linear response to E^2, known as nonlinear Hall effect. We show the strain modulated transport properties of nonlinear Hall effect in monolayer WSe2 with moderate hole-doping by gating. The second-harmonic Hall signals show quadratic dependence on electric field, and the corresponding orbital magnetization per current density can reach as large as 60. In contrast to the conventional Rashba-Edelstein effect with in-plane spin polarization, such current-induced orbital magnetization is along the out-of-plane direction, thus promising for high-efficient electrical switching of perpendicular magnetization.
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