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Register a new userStrain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe2 Monolayer
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The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K and K valleys, having Berry curvatures with opposite signs, and thus vanishing anomalous Hall effect in this system. Here we report the experimental realization of asymmetrical distribution of Berry curvature in a single valley in monolayer WSe2 through applying uniaxial strain to break C3v symmetry. As a result, although the Berry curvature itself is still opposite in K and K valleys, the two valleys would contribute equally to nonzero Berry curvature dipole. Upon applying electric field, the emergent Berry curvature dipole would lead to an out-of-plane orbital magnetization, which further induces an anomalous Hall effect with a linear response to E^2, known as nonlinear Hall effect. We show the strain modulated transport properties of nonlinear Hall effect in monolayer WSe2 with moderate hole-doping by gating. The second-harmonic Hall signals show quadratic dependence on electric field, and the corresponding orbital magnetization per current density can reach as large as 60. In contrast to the conventional Rashba-Edelstein effect with in-plane spin polarization, such current-induced orbital magnetization is along the out-of-plane direction, thus promising for high-efficient electrical switching of perpendicular magnetization.
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The Berry curvature dipole is a physical quantity that is expected to allow various quantum geometrical phenomena in a range of solid-state systems. Monolayer transition metal dichalcogenides provide an exceptional platform to modulate and investigate the Berry curvature dipole through strain. Here we theoretically demonstrate and experimentally verify for monolayer MoS$_rm{2}$ the generation of valley orbital magnetization as a response to an in-plane electric field due to the Berry curvature dipole. The measured valley orbital magnetization shows excellent agreement with the calculated Berry curvature dipole which can be controlled by the magnitude and direction of strain. Our results show that the Berry curvature dipole acts as an effective magnetic field in current-carrying systems, providing a novel route to generate magnetization.
In recent years, it has been shown that Berry curvature monopoles and dipoles play essential roles in the anomalous Hall effect and the nonlinear Hall effect respectively. In this work, we demonstrate that Berry curvature multipoles (the higher moments of Berry curvatures at the Fermi energy) can induce higher-order nonlinear anomalous Hall (NLAH) effect. Specifically, an AC Hall voltage perpendicular to the current direction emerges, where the frequency is an integer multiple of the frequency of the applied current. Importantly, by analyzing the symmetry properties of all the 3D and 2D magnetic point groups, we note that the quadrupole, hexapole and even higher Berry curvature moments can cause the leading-order frequency multiplication in certain materials. To provide concrete examples, we point out that the third-order NLAH voltage can be the leading-order Hall response in certain antiferromagnets due to Berry curvature quadrupoles, and the fourth-order NLAH voltage can be the leading response in the surface states of topological insulators induced by Berry curvature hexapoles. Our results are established by symmetry analysis, effective Hamiltonian and first-principles calculations. Other materials which support the higher-order NLAH effect are further proposed, including 2D antiferromagnets and ferromagnets, Weyl semimetals and twisted bilayer graphene near the quantum anomalous Hall phase.
We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures, where the gauge factor can reach as large as 2400. The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole. Upon increasing strain, Berry curvature dipole can generate net orbital magnetization, which would introduce additional magnetic scattering, decreasing the mobility and thus conductivity. Our work demonstrates the strain engineering of Berry curvature and thus the transport properties, making monolayer WSe2 potential for the application in the high-performance flexible and transparent electronics.
Topological Weyl semimetals (WSMs) have been predicted to be excellent candidates for detecting Berry curvature dipole (BCD) and the related non-linear effects in electronics and optics due to the large Berry curvature concentrated around the Weyl nodes. And yet, linearized models of isolated tilted Weyl cones only realize a diagonal non-zero BCD tensor which sum to zero in the model of WSM with multiple Weyl nodes in the presence of mirror symmetry. On the other hand, recent textit{ab initio} work has found that realistic WSMs like TaAs-type or MoTe$_2$-type compounds, which have mirror symmetry, indeed show an off-diagonal BCD tensor with an enhanced magnitude for its non-zero components. So far, there is a lack of theoretical work addressing this contradiction for 3D WSMs. In this paper, we systematically study the BCD in 3D WSMs using lattice Weyl Hamiltonians, which go beyond the linearized models. We find that the non-zero BCD and its related important features for these WSMs do not rely on the contribution from the Weyl nodes. Instead, they are dependent on the part of the Fermi surface that lies textit{between} the Weyl nodes, in the region of the reciprocal space where neighboring Weyl cones overlap. For large enough chemical potential such Fermi surfaces are present in the lattice Weyl Hamiltonians as well as in the realistic WSMs. We also show that, a lattice Weyl Hamitonian with a non-zero chiral chemical potential for the Weyl cones can also support dips or peaks in the off-diagonal components of the BCD tensor near the Weyl nodes themselves, consistent with recent textit{ab initio} work.
In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with local strain, the nanoscale interplay between strain, excitons, defects and local crystalline structure that gives rise to these quantum emitters is poorly understood. Here, we combine room-temperature nano-optical imaging and spectroscopy of excitons in nanobubbles of localized strain in monolayer WSe2 with atomistic structural models to elucidate how strain induces nanoscale confinement potentials that give rise to highly localized exciton states in 2D semiconductors. Nano-optical imaging of nanobubbles in low-defect monolayers reveal localized excitons on length scales of approximately 10 nm at multiple sites along the periphery of individual nanobubbles, which is in stark contrast to predictions of continuum models of strain. These results agree with theoretical confinement potentials that are atomistically derived from measured topographies of existing nanobubbles. Our results provide one-of-a-kind experimental and theoretical insight of how strain-induced confinement - without crystalline defects - can efficiently localize excitons on length scales commensurate with exciton size, providing key nanoscale structure-property information for quantum emitter phenomena in monolayer WSe2.
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