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Register a new userPolarization-selective excitation of N-V centers in diamond
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Added by
Thiago P. Mayer Alegre
Publication date
2007
fields
Physics
and research's language is
English
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The nitrogen-vacancy (N-V) center in diamond is promising as an electron spin qubit due to its long-lived coherence and optical addressability. The ground state is a spin triplet with two levels ($m_s = pm 1$) degenerate at zero magnetic field. Polarization-selective microwave excitation is an attractive method to address the spin transitions independently, since this allows operation down to zero magnetic field. Using a resonator designed to produce circularly polarized microwaves, we have investigated the polarization selection rules of the N-V center. We first apply this technique to N-V ensembles in [100] and [111]-oriented samples. Next, we demonstrate an imaging technique, based on optical polarization dependence, that allows rapid identification of the orientations of many single N-V centers. Finally, we test the microwave polarization selection rules of individual N-V centers of known orientation.
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We studied the dynamic nuclear spin polarization of nitrogen in negatively charged nitrogen-vacancy (NV) centers in diamond both experimentally and theoretically over a wide range of magnetic fields from 0 to 1100 G covering both the excited-state level anti-crossing and the ground-state level anti-crossing magnetic field regions. Special attention was paid to the less studied ground-state level anti-crossing region. The nuclear spin polarization was inferred from measurements of the optically detected magnetic resonance signal. These measurements show that a very large (up to $96 pm 2%$) nuclear spin polarization of nitrogen can be achieved over a very broad range of magnetic field starting from around 400 G up to magnetic field values substantially exceeding the ground-state level anti-crossing at 1024 G. We measured the influence of angular deviations of the magnetic field from the NV axis on the nuclear spin polarization efficiency and found that, in the vicinity of the ground-state level anti-crossing, the nuclear spin polarization is more sensitive to this angle than in the vicinity of the excited-state level anti-crossing. Indeed, an angle as small as a tenth of a degree of arc can destroy almost completely the spin polarization of a nitrogen nucleus. In addition, we investigated theoretically the influence of strain and optical excitation power on the nuclear spin polarization.
We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned areas evolve into regular arrays of (001) oriented diamond nano-islands with diameters of <500nm and a height of approx. 60 nm. In the islands, we identify single SiV color centers with narrow zero phonon lines down to 1 nm at room temperature.
The nitrogen-vacancy (N-V) center in diamond is a widely-used platform for quantum information processing and metrology. The electron-spin state of N-V center could be initialized and readout optically, and manipulated by resonate microwave fields. In this work, we analyze the dependence of electron-spin initialization on widths of laser pulses. We build a numerical model to simulate this process and verify the simulation results in experiment. Both simulations and experiments reveal a fact that shorter laser pulses are helpful to the electron-spin polarization. We therefore propose to use extremely-short laser pulses for electron-spin initialization. In this new scheme, the spin-state contrast could be improved about 10% in experiment by using laser pulses as short as 4 ns in width. Furthermore, we provide a mechanism to explain this effect which is due to the occupation time in the meta-stable spin-singlet states of N-V center. Our new scheme is applicable in a broad range of NV-based applications in the future.
Coherent communication over mesoscale distances is a necessary condition for the application of solid-state spin qubits to scalable quantum information processing. Among other routes under study, one possibility entails the generation of magnetostatic surface spin waves (MSSW) dipolarly coupled to shallow paramagnetic defects in wide-bandgap semiconductors. As an initial step in this direction, here we make use of room-temperature MSSWs to mediate the interaction between the microwave field from an antenna and the spin of a nitrogen-vacancy (NV) center in diamond. We show that this transport spans distances exceeding 3 mm, a manifestation of the MSSW robustness and long diffusion length. Using the NV spin as a local sensor, we find that the MSSW amplitude grows linearly with the applied microwave power, suggesting this approach could be extended to amplify the signal from neighboring spin qubits by several orders of magnitude.
Creation of nitrogen-vacancy (NV) centers at the nanoscale surface region in diamond, while retaining their excellent spin and optical properties, is essential for applications in quantum technology. Here, we demonstrate the extension of the spin-coherence time ($it{T}$${_2}$), the stabilization of the charge state, and an improvement of the creation yield of NV centers formed by the ion-implantation technique at a depth of $sim$15 nm in phosphorus-doped n-type diamond. The longest $it{T}$${_2}$ of about 580 $mu$s of a shallow NV center approaches the one in bulk diamond limited by the nuclear spins of natural abundant $^{13}$C. The averaged $it{T}$${_2}$ in n-type diamond is over 1.7 times longer than that in pure non-doped diamond. Moreover, the stabilization of the charge state and the more than twofold improvement of the creation yield are confirmed. The enhancements for the shallow NV centers in an n-type diamond-semiconductor are significant for future integrated quantum devices.
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