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Register a new userSite selective growth of heteroepitaxial diamond nanoislands containing single SiV centers
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We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned areas evolve into regular arrays of (001) oriented diamond nano-islands with diameters of <500nm and a height of approx. 60 nm. In the islands, we identify single SiV color centers with narrow zero phonon lines down to 1 nm at room temperature.
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Nonlinear optical processes rely on the intrinsically weak interactions between photons enabled by their coupling with matter. Unfortunately, many applications in nonlinear optics are severely hindered by the small response of conventional materials. Metallic nanostructures partially alleviate this situation, as the large light enhancement associated with their localized plasmons amplifies their nonlinear response to record high levels. Graphene hosts long-lived, electrically tunable plasmons that also interact strongly with light. Here we show that the nonlinear polarizabilities of graphene nanoislands can be electrically tuned to surpass by several orders of magnitude those of metal nanoparticles of similar size. This extraordinary behavior extends over the visible and near-infrared for islands consisting of hundreds of carbon atoms doped with moderate carrier densities. Our quantum-mechanical simulations of the plasmon-enhanced optical response of nanographene reveal this material as an ideal platform for the development of electrically tunable nonlinear optical nanodevices.
Nanodiamonds containing color centers open up many applications in quantum information processing, metrology, and quantum sensing. In particular, silicon vacancy (SiV) centers are prominent candidates as quantum emitters due to their beneficial optical qualities. Here we characterize nanodiamonds produced by a high-pressure high-temperature method without catalyst metals, focusing on two samples with clear SiV signatures. Different growth temperatures and relative content of silicon in the initial compound between the samples altered their nanodiamond size distributions and abundance of SiV centers. Our results show that nanodiamond growth can be controlled and optimized for different applications.
Single crystal diamond membranes that host optically active emitters are highly attractive components for integrated quantum nanophotonics. In this work we demonstrate bottom-up synthesis of single crystal diamond membranes containing the germanium vacancy (GeV) color centers. We employ a lift-off technique to generate the membranes and perform chemical vapour deposition in a presence of germanium oxide to realize the insitu doping. Finally, we show that these membranes are suitable for engineering of photonic resonators such as microring cavities with quality factors of 1500. The robust and scalable approach to engineer single crystal diamond membranes containing emerging color centers is a promising pathway for realization of diamond integrated quantum nanophotonic circuits on a chip.
Producing nano-structures with embedded bright ensembles of lifetime-limited emitters is a challenge with potential high impact in a broad range of physical sciences. In this work, we demonstrate controlled charge transfer to and from dark states exhibiting very long lifetimes in high density ensembles of SiV centers hosted in a CVD-grown diamond nano-pyramid. Further, using a combination of resonant photoluminescence excitation and a frequency-selective persistent hole burning technique that exploits such charge state transfer, we could demonstrate close to lifetime-limited linewidths from the SiV centers. Such a nanostructure with thousands of bright narrow linewidth emitters in a volume much below $lambda^3$ will be useful for coherent light-matter coupling, for biological sensing, and nanoscale thermometry.
Vacancy centers in diamond have proven to be a viable solid-state platform for quantum coherent opto-electronic applications. Among the variety of vacancy centers, silicon-vacancy (SiV) centers have recently attracted much attention as an inversion-symmetric system that is less susceptible to electron-phonon interactions. Nevertheless, phonon-mediated processes still degrade the coherent properties of SiV centers, however characterizing their electron-phonon coupling is extremely challenging due to their weak spectroscopic signatures and remains an open experimental problem. In this paper we theoretically investigate signatures of electron-phonon coupling in simulated linear and nonlinear spectra of SiV centers. We demonstrate how even extremely weak electron-phonon interactions, such as in SiV centers, may be completely characterized via nonlinear spectroscopic techniques and even resolved between different fine-structure transitions.
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