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Register a new userBasic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals
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The process of annealing of a CdTe:Cl ingot during its cooling after growth was studied. The annealing was performed in two stages: a high-temperature stage, with an approximate equality of chlorine and cadmium vacancy concentrations established at the thermodynamic equilibrium between the crystal and vapors of volatile components, and a low-temperature stage, with charged defects interacting to form neutral associations. The chlorine concentrations necessary to obtain semi-insulating crystals were determined for various ingot cooling rates in the high temperature stage. The dependence of the chlorine concentration [Cl+Te] in the ingot on the temperature of annealing in the high-temperature stage was found. The carrier lifetimes and drift mobilities were obtained in relation to the temperature and cadmium vapor pressure in the postgrowth annealing of the ingot.
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Studies of n-CdZnTe crystals (photoluminescence, extrinsic photoconductivity, Hall effect, time-of-flight technique) have shown that the excess concentration of vacancies of cadmium (Vcd) is the main reason of low, as a rule, values of product of mobility to life time of holes (mhth). The reduction of the concentration of cadmium vacancies (decreasing of the intensity of near 1eV photoluminescence band and an intensity of the (0.9-1.3) eV extrinsic photoconductivity band) by annealing of the crystals at 600 C results in increasing of value of mhth. Influence of Zn on formation of the basic photoelectric properties of CdZnTe crystals has been explained by self-control of a concentration of cadmium vacancies Vcd due to addition of Zn results in formation of divacancies of metal, which in part dissociate and provide a crystal with necessary quantity of monovacancies for processes of complex formation. That makes process of obtaining of semi-insulating CdZnTe crystals less dependent from pressure Pcd in comparison with CdTe. However with the purpose of obtaining CdZnTe crystals with high value of mhth (i.e. with small concentration of the free vacancies of cadmium) it is necessary to control Pcd above the crystal at stages of its growth and annealing.
We use optical transient-grating spectroscopy to measure spin diffusion of optically oriented electrons in bulk, semi-insulating GaAs(100). Trapping and recombination do not quickly deplete the photoexcited population. The spin diffusion coefficient of 88 +/- 12 cm2/s is roughly constant at temperatures from 15 K to 150 K, and the spin diffusion length is at least 450 nm. We show that it is possible to use spin diffusion to estimate the electron diffusion coefficient. Due to electron-electron interactions, the electron diffusion is 1.4 times larger than the spin diffusion.
We present an open-source program irvsp, to compute irreducible representations of electronic states for all 230 space groups with an interface to the Vienna ab-initio Simulation Package. This code is fed with plane-wave-based wavefunctions (e.g. WAVECAR) and space group operators (listed in OUTCAR), which are generated by the VASP package. This program computes the traces of matrix presentations and determines the corresponding irreducible representations for all energy bands and all the k-points in the three-dimensional Brillouin zone. It also works with spin-orbit coupling (SOC), i.e., for double groups. It is in particular useful to analyze energy bands, their connectivities, and band topology, after the establishment of the theory of topological quantum chemistry. Accordingly, the associated library - irrep_bcs.a - is developed, which can be easily linked to by other ab-initio packages. In addition, the program has been extended to orthogonal tight-binding (TB) Hamiltonians, e.g. electronic or phononic TB Hamiltonians. A sister program ir2tb is presented as well.
Elastic energy absorption measurements versus temperature on semiconducting, semi-insulating (SI) and Fe-doped InP are reported. A thermally activated relaxation process is found only in the SI state, which is identified with the hopping of H atoms trapped at In vacancies. It is proposed that the presence of In vacancies in InP prepared by the liquid encapsulated Czochralski method is due to the lowering of their energy by the saturation of the P dangling bonds with H atoms dissolved from the capping liquid containing H2O. The conversion of iron-free InP to the SI state following high temperature treatments would be due to H loss with the transformation of the H-saturated In vacancies, V_In-H_4 donors, into neutral and acceptor V_In-H_n complexes with n < 4. Such complexes would produce the observed anelastic relaxation process and may also act as deep acceptors which neutralize unwanted donor impurities.
The charge dynamics of hydrogen-like centers formed by the implantation of energetic (4 MeV) muons in semi-insulating GaAs have been studied by muon spin resonance in electric fields. The results point to the significant role of deep hole traps in the compensation mechanism of GaAs. Electric-field-enhanced neutralization of deep electron and hole traps by muon-track-induced hot carriers results to an increase of the non-equilibrium carrier life-times. As a consequence, the muonium ($mu^+ + e^-$) center at the tetrahedral As site can capture the tracks holes and therefore behaves like a donor.
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