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Register a new userI-V characteristics of the vortex state in MgB2 thin films
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The current-voltage (I-V) characteristics of various MgB2 films have been studied at different magnetic fields parallel to c-axis. At fields mu0H between 0 and 5T, vortex liquid-glass transitions were found in the I-V isotherms. Consistently, the I-V curves measured at different temperatures show a scaling behavior in the framework of quasi-two-dimension (quasi-2D) vortex glass theory. However, at mu0 H >= 5T, a finite dissipation was observed down to the lowest temperature here, T=1.7K, and the I-V isotherms did not scale in terms of any known scaling law, of any dimensionality. We suggest that this may be caused by a mixture of sigma band vortices and pi band quasiparticles. Interestingly, the I-V curves at zero magnetic field can still be scaled according to the quasi-2D vortex glass formalism, indicating an equivalent effect of self-field due to persistent current and applied magnetic field.
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We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The EB process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD process produces films with structural disorder on a scale less that the coherence length that further improves pinning, but also depresses Tc.
In this communication we report studies of d.c current-voltage (I-V) characteristics of ultra thin films of Bi, quench condensed on single crystal sapphire substrates at T = 15K. The hysteretic I-V characteristics are explained using a resistively and capacitively shunted junction (RCSJ) model of Josephson junction arrays. The Josephson coupling energy($E_J$) and the charging energy($E_c$) are calculated for different thickness($d$) values. A low resistance state is found in the low current regime below the critical current, $I_c$. This resistance $R_0$ is found to have a minimum at a particular thickness ($d_c$) value. Reflection High Energy Electron Diffraction (RHEED) studies are done on these films. A distinct appearance of a diffuse ring near $d_c$ is observed in the diffraction images, consistent with the recent STM studies(Ekinci and Valles, PRL {bf 82}(1999) 1518). These films show an irreversible annealing when temperature is increased. The annealing temperature ($T_a$) also has a maximum at the same thickness. Althoguh the R$_s$ vs T of quench condensed Bi films suggest that the films are uniform, our results indicate that even in thick films, the order parameter is not fully developed over the complete area of the film. These results are discussed qualitatively.
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Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 mWcm and Tc from 29.5 to 38.8 K were measured up to 28 T. Hc2(T) curves present a linear behavior towards low temperatures. Very high critical field values have been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms.
We investigated the effect of alloying on the upper critical field $H_{c2}$ in 12 $MgB_2$ films, in which disorder was introduced by growth, carbon doping or He-ion irradiation, finding a significant $H_{c2}$ enhancement in C-alloyed films, and an anomalous upward curvature of $H_{c2}(T)$. Record high values of $H_{c2}^{perp}(4.2) simeq 35T$ and $H_{c2}|(4.2) simeq 51T$ were observed perpendicular and parallel to the ab plane, respectively. The temperature dependence of $H_{c2}(T)$ is described well by a theory of dirty two-gap superconductivity. Extrapolation of the experimental data to T=0 suggests that $H_{c2}|(0)$ approaches the paramagnetic limit of $sim 70T$.
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