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We investigated the effect of alloying on the upper critical field $H_{c2}$ in 12 $MgB_2$ films, in which disorder was introduced by growth, carbon doping or He-ion irradiation, finding a significant $H_{c2}$ enhancement in C-alloyed films, and an anomalous upward curvature of $H_{c2}(T)$. Record high values of $H_{c2}^{perp}(4.2) simeq 35T$ and $H_{c2}|(4.2) simeq 51T$ were observed perpendicular and parallel to the ab plane, respectively. The temperature dependence of $H_{c2}(T)$ is described well by a theory of dirty two-gap superconductivity. Extrapolation of the experimental data to T=0 suggests that $H_{c2}|(0)$ approaches the paramagnetic limit of $sim 70T$.
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We report the high-field superconducting properties of thin, disordered Re films via magneto-transport and tunneling density of states measurements. Films with thicknesses in the range of 9 nm to 3 nm had normal state sheet resistances of $sim$0.2 k$Omega$ to $sim$1 k$Omega$ and corresponding transition temperatures in the range of 6 K to 3 K. Tunneling spectra were consistent with those of a moderate coupling BCS superconductor. Notwithstanding these unremarkable superconducting properties, the films exhibited an extraordinarily high upper critical field. We estimate their zero-temperature $H_{c2}$ to be more than twice the Pauli limit. Indeed, in 6 nm samples the estimated reduced critical field $H_{c2}/T_csim$ 5.6 T/K is among the highest reported for any elemental superconductor. Although the sheet resistances of the films were well below the quantum resistance $R_Q=h/4e^2$, their $H_{c2}$s approached the theoretical upper limit of a strongly disordered superconductor for which $k_Fellsim1$.
High-quality epitaxial MgB2 thin films prepared by pulsed laser deposition with Tc = 39 K offer the opportunity to study the anisotropy and robustness of the superconducting state in magnetic fields. We measure the in-plane electrical resistivity of the films in magnetic fields to 60T and estimate the superconducting upper critical field Hc(0) = 24 +- 3 T for field oriented along the c-axis, and Hab(0) = 30 +- 2 T for field in the plane of the film. We find the zero-temperature coherence lengths xi_c(0) = 30 A and xi_ab(0) = 37 A to be shorter than the calculated electronic mean free path l = 100 +- 50 A, which places our films in the clean limit. The observation of such large upper critical fields from clean limit samples, coupled with the relatively small anisotropy, provides strong evidence of the viability of MgB2 as a technologically important superconductor.
We have performed flux noise and AC-susceptibility measurements on two 400 nm thick MgB$_2$ films. Both measurement techniques give information about the vortex dynamics in the sample, and hence the superconducting transition, and can be linked to each other through the fluctuation-dissipation-theorem. The transition widths for the two films are 0.3 and 0.8 K, respectively, and the transitions show a multi step-like behavior in the AC-susceptibility measurements. The same phenomenon is observed in the flux noise measurements through a change in the frequency dependence of the spectral density at each step in the transition. The results are discussed and interpreted in terms of vortices carrying an arbitrary fraction of a flux quantum as well as in terms of different macroscopic regions in the films having slightly different compositions, and hence, different critical temperatures.
In this paper, we analyze the upper critical field of four MgB2 thin films, with different resistivity (between 5 to 50 mWcm) and critical temperature (between 29.5 to 38.8 K), measured up to 28 Tesla. In the perpendicular direction the critical fields vary from 13 to 24 T and we can estimate 42-57 T range in other direction. We observe linear temperature dependence even at low temperatures without saturation, in contrast to BCS theory. Considering the multiband nature of the superconductivity in MgB2, we conclude that two different scattering mechanisms influence separately resistivity and critical field. In this framework, resistivity values have been calculated from Hc2(T) curves and compared with the measured ones.
We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The EB process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD process produces films with structural disorder on a scale less that the coherence length that further improves pinning, but also depresses Tc.
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