In the present paper, we discuss the influence of point defects on electrical and
optical characteristics of ZnO thin films grown by the atomic layer deposition (ALD)
method on glass and silicon substrates at low temperature (100°C). Room temperatu
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photoluminescence (RT PL) spectra, secondary ion mass spectroscopy (SIMS), and Hall
Effect measurements were made for as-grown ZnO layers. The annealing process was
performed in air as well as in N2 atmosphere at 400°C for half an hour. The long annealing
resulted in a larger reduction in electron concentration. Simultaneously, an evident
increase in carrier's mobility was observed, which may suggest that annealing resulted in a
decreased number of native defects in the ZnO layers. Also, it was observed that hydrogen
atoms in ZnO samples did not dominate their electrical properties with the increase of
electrons concentration.
