اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدDynamic nuclear polarization and ESR hole burning in As doped silicon
159
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We present an experimental study of the Dynamic Nuclear Polarization (DNP) of si{} nuclei in silicon crystals of natural abundance doped with As in the temperature range 0.1-1 K and in strong magnetic field of 4.6 T. This ensures very high degree of electron spin polarization, extremely slow nuclear relaxation and optimal conditions for realization of Overhauser and resolved solid effects. We found that the solid effect DNP leads to an appearance of a pattern of holes and peaks in the ESR line, separated by the super-hyperfine interaction between the donor electron and si{} nuclei closest to the donor. On the contrary, the Overhauser effect DNP mainly affects the remote si{} nuclei having the weakest interaction with the donor electron. This leads to an appearance of a very narrow ($approx$ 3 mG wide) hole in the ESR line. We studied relaxation of the holes after burning, which is caused by the nuclear spin diffusion. Analyzing the spin diffusion data with a simple one-dimensional spectral diffusion model leads to a value of the spectral diffusion coefficient $D=8(3)times 10^{-3}$ mG$^2$/s. Our data indicate that the spin diffusion is not completely prevented even in the frozen core near the donors. The emergence of the narrow hole after the Overhauser DNP may be explained by a partial softening of the frozen core caused by Rabi oscillations of the electron spin.
قيم البحث
اقرأ أيضاً
Direct dynamic nuclear polarization of 1H nuclei in frozen water and water-ethanol mixtures is demonstrated using silicon nanoparticles as the polarizing agent. Electron spins at dangling-bond sites near the silicon surface are identified as the sour
ce of the nuclear hyperpolarization. This novel polarization method open new avenues for the fabrication of surface engineered nanostructures to create high nuclear-spin polarized solutions without introducing contaminating radicals, and for the study of molecules adsorbed onto surfaces.
We investigated optical spin orientation and dynamic nuclear polarization (DNP) in individual self-assembled InGaAs/GaAs quantum dots (QDs) doped by a single Mn atom, a magnetic impurity providing a neutral acceptor A$^0$ with an effective spin $J=1$
. We find that the spin of an electron photo-created in such a quantum dot can be efficiently oriented by a quasi-resonant circularly-polarized excitation. For the electron spin levels which are made quasi-degenerate by a magnetic field compensating the exchange interaction $Delta_e$ with A$^0$, there is however a full depolarization due the anisotropic part of the exchange. Still, in most studied QDs, the spin polarized photo-electrons give rise to a pronounced DNP which grows with a longitudinal magnetic field until a critical field where it abruptly vanishes. For some QDs, several replica of such DNP sequence are observed at different magnetic fields. This striking behavior is qualitatively discussed as a consequence of different exchange interactions experienced by the electron, driving the DNP rate via the energy cost of electron-nucleus spin flip-flops.
We theoretically investigate the controlled dynamic polarization of lattice nuclear spins in GaAs double quantum dots containing two electrons. Three regimes of long-term dynamics are identified, including the build up of a large difference in the Ov
erhauser fields across the dots, the saturation of the nuclear polarization process associated with formation of so-called dark states, and the elimination of the difference field. We show that in the case of unequal dots, build up of difference fields generally accompanies the nuclear polarization process, whereas for nearly identical dots, build up of difference fields competes with polarization saturation in dark states. The elimination of the difference field does not, in general, correspond to a stable steady state of the polarization process.
The dynamics of the coupled electron-nuclear spin system is studied in an ensemble of singly-charged (In,Ga)As/GaAs quantum dots (QDs) using periodic optical excitation at 1 GHz repetition rate. In combination with the electron-nuclei interaction, th
e highly repetitive excitation allows us to lock the electron spins into magnetic resonance in a transverse external magnetic field. Sweeping the field to higher values, the locking leads to an effective diamagnetic response of significant strength due to dynamic nuclear polarization, which shields the QD electrons at least partly from the external field and can even keep the internal magnetic field constant up to 1.3 T field variation. We model the effect through a magnetic field-dependent polarization rate of the nuclei, from which we suggest a strategy for adjusting the nuclear polarization through the detuning between optical excitation and electronic transition, in addition to tuning the magnetic field.
We present a systematic study of the photo-absorption spectra of various Si$_{n}$H$_{m}$ clusters (n=1-10, m=1-14) using the time-dependent density functional theory (TDDFT). The method uses a real-time, real-space implementation of TDDFT involving f
ull propagation of the time dependent Kohn-Sham equations. Our results for SiH$_{4}$ and Si$_{2}$H$_{6}$ show good agreement with the earlier calculations and experimental data. We find that for small clusters (n<7) the photo-absorption spectrum is atomic-like while for the larger clusters it shows bulk-like behaviour. We study the photo-absorption spectra of silicon clusters as a function of hydrogenation. For single hydrogenation, we find that in general, the absorption optical gap decreases and as the number of silicon atoms increase the effect of a single hydrogen atom on the optical gap diminishes. For further hydrogenation the optical gap increases and for the fully hydrogenated clusters the optical gap is larger compared to corresponding pure silicon clusters.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
