ﻻ يوجد ملخص باللغة العربية
Spin transistors based on a semiconducting channel attached to ferromagnetic electrodes suffer from fast spin decay and extremely low spin injection/detection efficiencies. Here, we propose an alternative all-in-one spin device whose operation principle relies on electric manipulation of the spin lifetime in two-dimensional (2D) SnTe, in which the sizable spin Hall effect eliminates the need for using ferromagnets. In particular, we explore the persistent spin texture (PST) intrinsically present in the ferroelectric phase which protects the spin from decoherence and supports extraordinarily long spin lifetime. Our first-principles calculations followed by symmetry arguments revealed that such a spin wave mode can be externally detuned by perpendicular electric field, leading to spin randomization and decrease in spin lifetime. We further extend our analysis to ultrathin SnTe films and confirm the emergence of PST as well as a moderate enhancement of intrinsic spin Hall conductivity. The recent room-temperature observation of the ferroelectric phase in 2D-SnTe suggests that novel all-electric spintronics devices are within reach.
Magnetic anisotropy phenomena in bimetallic antiferromagnets Mn$_2$Au and MnIr are studied by first-principles density functional theory calculations. We find strong and lattice-parameter dependent magnetic anisotropies of the ground state energy, ch
We have used soft x-ray photoemission electron microscopy to image the magnetization of single domain La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ nano-islands arranged in geometrically frustrated configurations such as square ice and kagome ice geometries. Upon th
Nitrogen-vacancy magnetic microscopy is employed in quenching mode as a non-invasive, high resolution tool to investigate the morphology of isolated skyrmions in ultrathin magnetic films. The skyrmion size and shape are found to be strongly affected
Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free f
Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the films thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediat