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We present measurements of the optical spectra on single crystals of spinel-type compound cis. This material undergoes a sharp metal-insulator transition at 230 K. Upon entering the insulating state, the optical conductivity shows an abrupt spectral weight transfer and an optical excitation gap opens. In the metallic phase, Drude components in low frequencies and an interband transition peak at $sim 2 eV$ are observed. In the insulating phase, a new peak emerges around $0.5 eV$. This peak is attributed to the transition of electrons from the occupied Ir$^{3+}$ $t_{2g}$ state to upper Ir$^{4+}$ $t_{2g}$ subband resulting from the dimerization of Ir$^{4+}$ ions in association with the simultaneous formations of Ir$^{3+}$ and Ir$^{4+}$ octamers as recently revealed by the x-ray diffraction experiment. Our experiments indicate that the band structure is reconstructed in the insulating phase due to the sudden structural transition.
Ultrafast transient reflectivity across the unusual three-dimensional Peierls-like insulator-metal (IM) transition in CuIr_{2}S_{4} was measured as a function of temperature. The low-temperature insulating-phase transient response is dominated by bro
Ultrafast dynamics across the photoinduced three-dimensional Peierls-like insulator-metal (IM) transition in CuIr$_{2}$S$_{4}$ was investigated by means of the all-optical ultrafast multi-pulse time-resolved spectroscopy. The structural coherence of
The spinel-structure CuIr$_{2}$S$_{4}$ compound displays a rather unusual orbitally-driven three-dimensional Peierls-like insulator-metal transition. The low-T symmetry-broken insulating state is especially interesting due to the existence of a metas
We demonstrate via a muon spin rotation experiment that the electronic ground state of the iridium spinel compound, CuIr$_2$S$_4$, is not the presumed spin-singlet state but a novel paramagnetic state, showing a quasistatic spin glass-like magnetism
In the context of correlated insulators, where electron-electron interactions (U) drive the localization of charge carriers, the metal-insulator transition (MIT) is described as either bandwidth (BC) or filling (FC) controlled. Motivated by the chall