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تسجيل مستخدم جديدA bubble-induced ultrastable and robust single-photon emitter in hexagonal boron nitride
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Quantum emitters in van der Waals (vdW) materials have attracted lots of attentions in recent years, and shown great potentials to be fabricated as quantum photonic nanodevices. Especially, the single photon emitter (SPE) in hexagonal boron nitride (hBN) emerges with the outstanding room-temperature quantum performances, whereas the ubiquitous blinking and bleaching restrict its practical applications and investigations critically. The bubble in vdW materials exhibits the stable structure and can modify the local bandgap by strains on nanoscale, which is supposed to have the ability to fix this photostability problem. Here we report a bubble-induced high-purity SPE in hBN under ambient conditions showing stable quantum-emitting performances, and no evidence of blinking and bleaching for one year. Remarkably, we observe the nontrivial successive activating and quenching dynamical process of the fluorescent defects at the SPE region under low pressures for the first time, and the robust recoverability of the SPE after turning back to the atmospheric pressure. The pressure-tuned performance indicates the SPE origins from the lattice defect isolated and activated by the local strain induced from the bubble, and sheds lights on the future high-performance quantum sources based on hBN.
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Solid-state single-photon emitters (SPEs) such as the bright, stable, room-temperature defects within hexagonal boron nitride (hBN) are of increasing interest for quantum information science applications. To date, the atomic and electronic origins of
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Hexagonal boron nitride (h-BN), a prevalent insulating crystal for dielectric and encapsulation layers in two-dimensional (2D) nanoelectronics and a structural material in 2D nanoelectromechanical systems (NEMS), has also rapidly emerged as a promisi
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