ﻻ يوجد ملخص باللغة العربية
We report on the experimental investigation of the polarization-dependent energy splitting in the lower exciton-polariton branches of a 1D microcavity. The splitting observed for the lowest branch can reach up to 1 meV. It does not result from low temperature thermal constraints but from anisotropic mechanical internal strains induced by etching. Those strains remove the degeneracy both in the photonic ($delta E_{mathrm{ph}}$) and excitonic ($delta E_{mathrm{exc}}$) components of the polariton but also in the photon-exciton coupling ($deltaOmega$). Those three contributions are accurately infered from experimental data. It appears that the sign and magnitude of the polarization splitting as well as the linear polarization of the corresponding polariton eigenstates can be tuned through the bare exciton-photon detuning. Moreover, no dependence on the width of the wire (from 3 to 7 $mathrm{mu}$m) is observed. We propose a mechanical model explaining the universality of those observations paving the way to the engineering of polarization eigenstates in microwires exciton-polaritons.
Atomically thin crystals of transition metal dichalcogenides are ideally suited to study the interplay of light-matter coupling, polarization and magnetic field effects. In this work, we investiagte the formation of exciton-polaritons in a MoSe2 mono
Monolayer transition metal dichalcogenides, known for exhibiting strong excitonic resonances, constitute a very interesting and versatile platform for investigation of light-matter interactions. In this work we report on a strong coupling regime betw
Exciton-polaritons are mixed light-matter quasiparticles. We have developed a statistical model describing stochastic exciton-photon transitions within a condensate of exciton polaritons. We show that the exciton-photon correlator depends on the hidd
We investigate the origin of overshoots in the exciton spin dynamics after resonant optical excitation. As a material system, we focus on diluted magnetic semiconductor quantum wells as they provide a strong spin-flip scattering for the carriers. Our
We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are compared to t