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We have developed and characterized the structure and composition of nanometers-thick solid-solution epitaxial layers of (V,Nb) on sapphire (1120), displaying a continuous lateral gradient of composition from one to another pure element. Further covered with an ultrathin pseudomorphic layer of W, these provide a template for the fast combinatorial investigation of any growth or physical property depending of strain.
We have studied the chemical and electronic properties of LaAlO3/SrVO3 ultrathin films by combining hard x-ray photoemission spectroscopy and transport measurements. We compare single SrVO3 (SVO) ultrathin films and SrVO3 buried below a polar LaAlO3
Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by chemical
In the crystal growth of transition metal dichalcogenides by the Chemical Vapor Transport method (CVT), the choice of the transport agent plays a key role. We have investigated the effect of various chemical elements and compounds on the growth of Ti
First principles calculations have been used to investigate the trends on the properties of isolated 3d transition metal impurities (from Sc to Cu) in diamond. Those impurities have small formation energies in the substitutional or double semi-vacanc
We report that graphene films with thickness ranging from 1 to 7 layers can be controllably synthesized on the surface of polycrystalline copper by a chemical vapour deposition method. The number of layers of graphene is controlled precisely by regul