ترغب بنشر مسار تعليمي؟ اضغط هنا

Spontaneous Emission Spectrum in Double Quantum Dot Devices

78   0   0.0 ( 0 )
 نشر من قبل Toshimasa Fujisawa
 تاريخ النشر 1998
  مجال البحث فيزياء
والبحث باللغة English
 تأليف T. Fujisawa




اسأل ChatGPT حول البحث

A double quantum dot device is a tunable two-level system for electronic energy states. A dc electron current directly measures the rates for elastic and inelastic transitions between the two levels. For inelastic transitions energy is exchanged with bosonic degrees of freedom in the environment. The inelastic transition rates are well described by the Einstein coefficients, relating absorption with stimulated and spontaneous emission. The most effectively coupled bosons in the specific environment of our semiconductor device are acoustic phonons. The experiments demonstrate the importance of vacuum fluctuations in the environment for little circuits of coherent quantum devices.

قيم البحث

اقرأ أيضاً

Studies of thermally induced transport in nanostructures provide access to an exciting regime where fluctuations are relevant, enabling the investigation of fundamental thermodynamic concepts and the realization of thermal energy harvesters. We study a serial double quantum dot formed in an InAs/InP nanowire coupled to two electron reservoirs. By means of a specially designed local metallic joule-heater, the temperature of the phonon bath in the vicinity of the double quantum dot can be enhanced. This results in phonon-assisted transport, enabling the conversion of local heat into electrical power in a nano-sized heat engine. Simultaneously, the electron temperatures of the reservoirs are affected, resulting in conventional thermoelectric transport. By detailed modelling and experimentally tuning the interdot coupling we disentangle both effects. Furthermore, we show that phonon-assisted transport gives access to the energy of excited states. Our findings demonstrate the versatility of our design to study fluctuations and fundamental nanothermodynamics.
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport expe riments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet-triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6 T.
We analyze, from a quantum information theory perspective, the possibility of realizing a SU(4) entangled Kondo regime in semiconductor double quantum dot devices. We focus our analysis on the ground state properties and consider the general experime ntal situation where the coupling parameters of the two quantum dots differ. We model each quantum dot with an Anderson type Hamiltonian including an interdot Coulomb repulsion and tunnel couplings for each quantum dot to independent fermionic baths. We find that the spin and pseudospin entanglements can be made equal, and the SU(4) symmetry recovered, if the gate voltages are chosen in such a way that the average charge occupancies of the two quantum dots are equal, and the double occupancy on the double quantum dot is suppressed. We present density matrix renormalization group numerical results for the spin and pseudospin entanglement entropies, and analytical results for a simplified model that captures the main physics of the problem.
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in t he zinc-blende crystal structure of GaAs however, results in strong piezoelectric coupling between lattice acoustic phonons and electrons, a potential hindrance for quantum computing architectures that can be charge-sensitive during certain operations. Here we examine phonon generation in a GaAs double dot, configured as a single- or two-electron charge qubit, and driven by the application of microwaves via surface gates. In a process that is a microwave analog of the Raman effect, stimulated phonon emission is shown to produce population inversion of a two-level system and provides spectroscopic signatures of the phononic environment created by the nanoscale device geometry.
One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We present theoret ical and experimental evidence that the cause of this problem in MOS double quantum dots is the stray positive charges in the oxide inducing accidental levels near the devices active region that allow spin blockade lifting. We also present evidence that these effects can be mitigated by device design modifications, such as overlapping gates.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا