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Composition-spread La1-xSrxMnO3 thin films were prepared by pulsed laser deposition technique from LaMnO3 and SrMnO3 targets. The films were epitaxial with a continuous variation of the out of plane lattice parameter along the direction of composition gradient. Scanning Raman spectroscopy has been employed as a non-destructive tool to characterize the composition-spread films. Raman spectra showed the variation of the structural, Jahn Teller distortions and the presence of coexisting phases at particular compositions that are in agreement with the previous observation on the single crystal samples. Raman spectra on the continuous composition-spread film also reveal the effect of disorder and strain on the compositions.
We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591 cm{-1}, which co
Raman spectroscopy is utilized to study the magnetic characteristics of heteroepitaxial NiO thin films grown by plasma-assisted molecular beam epitaxy on MgO(100) substrates. For the determination of the Neel temperature, we demonstrate a reliable ap
Graphene edges are of particular interest, since their chirality determines the electronic properties. Here we present a detailed Raman investigation of graphene flakes with well defined edges oriented at different crystallographic directions. The po
We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteris
We model Raman processes in silicene and germanene involving scattering of quasiparticles by, either, two phonons, or, one phonon and one point defect. We compute the resonance Raman intensities and lifetimes for laser excitations between 1 and 3$,$e