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We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS$_{4}$. Electrical resistivity increased with decreasing temperature according to the form proportional to $textrm{exp}(T_{0}/T)^{1/2} $, derived from variable range hopping with strong electron-electron interaction. Resistivity under magnetic fields was expressed by the same form with the characteristic temperature T0 decreasing with increasing magnetic field. Magnetoresistance ratio $rho (T,0)/rho(T,H)$ is 1.5 at 100 K for H=90 kOe and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. Possible mechanism of the large magnetoresistance is discussed.
Electronic flat band systems are a fertile platform to host correlation-induced quantum phenomena such as unconventional superconductivity, magnetism and topological orders. While flat band has been established in geometrically frustrated structures,
Crystal structure of spinel compound CuIr$_{2}$S$_{4}$ was examined by powder X-ray diffraction for the insulating phase below the metal-insulator transition at $T_{MI}$ = 230 K. The superstructure spots are reproduced by considering the displacement
Electrical resistivity ($rho$), magnetoresistance (MR), magnetization, thermopower and Hall effect measurements on the single crystal Gd$_{2}$PdSi$_3$, crystallizing in an AlB$_2$-derived hexagonal structure are reported. The well-defined minimum in
A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn$_2$Bi$_2$ when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular magnetic fie
Negative magnetoresistance (NMR) induced by the Adler-Bell-Jackiw anomaly is regarded as the most prominent quantum signature of Weyl semimetals when electrical field $E$ is collinear with the external magnetic field $B$. In this article, we report u