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تسجيل مستخدم جديدNew Anisotropic Behavior of Quantum Hall Resistance in (110) GaAs Heterostructures at mK Temperatures and Fractional Filling Factors
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Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (001) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-Level. This remarkable new anisotropy is independent of the current direction and depends on the polarity of the magnetic field.
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