اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدEpitaxial Growth of an n-type Ferromagnetic Semiconductor CdCr2Se4 on GaAs(001) and GaP(001)
94
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic and electronic properties. Magnetometry data confirm ferromagnetic order with a Curie temperature of 130 K, as in the bulk material. The magnetization exhibits hysteretic behavior with significant remanence, and an in-plane easy axis with a coercive field of ~125 Oe. Temperature dependent transport data show that the films are semiconducting in character and n-type as grown, with room temperature carrier concentrations of n ~ 1 x 10^18 cm-3.
قيم البحث
اقرأ أيضاً
A new type of (Ga,Mn)As microstructures with laterally confined electronic and magnetic properties has been realized by growing (Ga,Mn)As films on [1-10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on GaAs(001) subst
rates. The temperature- and field-dependent magnetotransport data of the overgrown structures are compared with those obtained from planar reference samples revealing the coexistence of electronic and magnetic properties specific for (001) and (113)A (Ga,Mn)As on a single sample.
We study the underlying chemical, electronic and magnetic properties of a number of magnetite based thin films. The main focus is placed onto NiO/Fe$_3$O$_4$(001) bilayers grown on MgO(001) and Nb-SrTiO$_3$(001) substrates. We compare the results wit
h those obtained on pure Fe$_3$O$_4$(001) thin films. It is found that the magnetite layers are oxidized and Fe$^{3+}$ dominates at the surfaces due to maghemite ($gamma$-Fe$_2$O$_3$) formation, which decreases with increasing magnetite layer thickness. From a layer thickness of around 20 nm on the cationic distribution is close to that of stoichiometric Fe$_3$O$_4$. At the interface between NiO and Fe$_3$O$_4$ we find the Ni to be in a divalent valence state, with unambiguous spectral features in the Ni 2p core level x-ray photoelectron spectra typical for NiO. The formation of a significant NiFe$_2$O$_4$ interlayer can be excluded by means of XMCD. Magneto optical Kerr effect measurements reveal significant higher coercive fields compared to magnetite thin films grown on MgO(001), and a 45$^{circ}$ rotated magnetic easy axis. We discuss the spin magnetic moments of the magnetite layers and find that the moment increases with increasing thin film thickness. At low thickness the NiO/Fe$_3$O$_4$ films grown on Nb-SrTiO$_3$ exhibits a significantly decreased spin magnetic moments. A thickness of 20 nm or above leads to spin magnetic moments close to that of bulk magnetite.
We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and indep
endent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.
By carrying out Monte Carlo simulations based on the two-species atomic-scale kinetic growth model of GaAs(001) homoepitaxy and comparing the results with scanning tunneling microscope images, we show that initial growing islands undergo the structur
al transformation before adopting the proper beta2(2x4) reconstruction.
We have probed the interface of a ferromagnetic/semiconductor (FM/SC) heterojunction by a combined high resolution photoemission spectroscopy and x-ray photoelectron diffraction study. Fe/ZnSe(001) is considered as an example of a very low reactivity
interface system and it expected to constitute large Tunnel Magnetoresistance devices. We focus on the interface atomic environment, on the microscopic processes of the interface formation and on the iron valence-band. We show that the Fe contact with ZnSe induces a chemical conversion of the ZnSe outermost atomic layers. The main driving force that induces this rearrangement is the requirement for a stable Fe-Se bonding at the interface and a Se monolayer that floats at the Fe growth front. The released Zn atoms are incorporated in substitution in the Fe lattice position. This formation process is independent of the ZnSe surface termination (Zn or Se). The Fe valence-band evolution indicates that the d-states at the Fermi level show up even at submonolayer Fe coverage but that the Fe bulk character is only recovered above 10 monolayers. Indeed, the Fe 1-band states, theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fe junctions, are strongly modified at the FM/SC interface.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
