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The cuprates seem to exhibit statistics, dimensionality and phase transitions in novel ways. The nature of excitations [i.e. quasiparticle or collective], spin-charge separation, stripes [static and dynamics], inhomogeneities, psuedogap, effect of impurity dopings [e.g. Zn, Ni] and any other phenomenon in these materials must be consistently understood. In this note we suggest Single Electron Tunneling Transistor [SET] based experiments to understand the role of charge dynamics in these systems. Assuming that SET operates as an efficient charge detection system we can expect to understand the underlying physics of charge transport and charge fluctuations in these materials for a range of doping. Experiments such as these can be classed in a general sense as mesoscopic and nano characterization of cuprates and related materials.
The cuprates seem to exhibit statistics, dimensionality and phase transitions in novel ways. The nature of excitations [i.e. quasiparticle or collective], spin-charge separation, stripes [static and dynamics], inhomogeneities, psuedogap, effect of
Previously we have indicated the relationship between quantum groups [Phys. Lett A272, (2000)] and strings via WZWN models in the context of applications to cuprates and related materials.The connection between quantum groups and strings is one way o
We examine experiments on energy gaps in high temperature superconductors (HTSC) in terms of experimental probes that utilize momentum, position, or neither. Experiments on very high quality mechanical tunnel junctions show a sharp energy gap with a
The temperature and field dependences of the trapped magnetic fields and of the frozen magnetoresistance of (Pb)Bi-Sr-Ca-Cu-O ceramics and Bi-based magnetron films are investigated. It is found that in the resistive transition region of granular Bi-H
Magnetoresistive properties of granular Bi-based HTSC with trapped magnetic fields are investigated in the temperature region near superconducting transition . The effect of trapped field and transport current values and orientations on the field dep