اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدPolarization at the Nanoscale
193
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Modern polarization theory yields surface bound charge associated with spontaneous polarization of bulk. However, understanding polarization in nano systems also requires a proper treatment of charge transfer between surface dangling bonds. Here, we develop a real-space approach for total polarization and apply it to wurtzite semiconductors and BaTiO3 perovskite. First-principles calculations utilizing this approach not only yield spontaneous bulk polarization in agreement with Berry phase calculations, but also uncover phenomena specific to nano systems. As an example, we show surface passivation leads to a complete quenching of the piezoelectric effect, which reemerges only at larger length scale and/or spontaneous polarization.
قيم البحث
اقرأ أيضاً
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in ferrimagnetic or ferro
magnetic multiferroics using electric field. Different from those studies based on static domain-level couplings, here the magnetoelectric coupling relies on the collaborative spin dynamics around domain walls. Accompanying the reversal of spin chirality driven by polarization switching, a rolling-downhill-like motion of domain wall is achieved at the nanoscale, which tunes the magnetization locally. Our mechanism opens an alternative route to pursuit practical and fast converse magnetoelectric functions via spin dynamics.
We present a new approach to femtosecond direct laser writing lithography to pattern nanocavities in ferromagnetic thin films. To demonstrate the concept we irradiated 300~nm thin nickel films by single intense femtosecond laser pulses through the gl
ass substrate and created complex surface landscapes at the nickel-air interface. Using a fluence above the ablation threshold the process is destructive and irradiation leads to the formation of 200~nm thin flakes of nickel around the ablation crater as seen by electron microscopy. By progressively lowering the peak laser fluence, slightly below the ablation threshold the formation of closed spallation cavities is demonstrated by interferometric microscopy. Systematic studies by electron and optical interferometric microscopies enabled us to gain an understanding of the thermo-mechanical mechanism leading to spallation at the solid-molten interface, a conclusion supported by molecular dynamics simulations. We achieved a control of the spallation process that enabled the fabrication of closed spallation nanocavities and their periodic arrangements. Due to their topology closed magnetic nanocavities can support unique couplings of multiple excitations (magnetic, optical, acoustic, spintronic). Thereby, they offer a unique physics playground, before unavailable, for magnetism, magneto-photonic and magneto-acoustic applications.
Interfacial charge transfer plays an essential role in establishing the relative alignment of the metal Fermi level and the energy bands of organic semiconductors. While the details remain elusive in many systems, this charge transfer has been inferr
ed in a number of photoemission experiments. We present electronic transport measurements in very short channel ($L < 100$ nm) transistors made from poly(3-hexylthiophene) (P3HT). As channel length is reduced, the evolution of the contact resistance and the zero-gate-voltage conductance are consistent with such charge transfer. Short channel conduction in devices with Pt contacts is greatly enhanced compared to analogous devices with Au contacts, consistent with charge transfer expectations. Alternating current scanning tunneling microscopy (ACSTM) provides further evidence that holes are transferred from Pt into P3HT, while much less charge transfer takes place at the Au/P3HT interface.
Local-probe imaging of the ferroelectric domain structure and auxiliary bulk pyroelectric measurements were conducted at low temperatures with the aim to clarify the essential aspects of the orbitally driven phase transition in GaMo4S8, a lacunar spi
nel crystal that can be viewed as a spin-hole analogue of its GaV4S8 counterpart. We employed multiple scanning probe techniques combined with symmetry and mechanical compatibility analysis to uncover the hierarchical domain structures, developing on the 10-100 nm scale. The identified domain architecture involves a plethora of ferroelectric domain boundaries and junctions, including primary and secondary domain walls in both electrically neutral and charged configurations, and topological line defects transforming neutral secondary walls into two oppositely charged ones.
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such phenomena
as the fractional quantum Hall effect and the metal-insulator transition. Here, we address the electrons spin alignment in a magnetic field in silicon-on-insulator quantum wells under valley polarisation. In stark contrast to expectations from a non-interacting model, we show experimentally that less magnetic field can be required to fully spin polarise a valley-polarised system than a valley-degenerate one. Furthermore, we show that these observations are quantitatively described by parameter free ab initio quantum Monte Carlo simulations. We interpret the results as a manifestation of the greater stability of the spin and valley degenerate system against ferromagnetic instability and Wigner crystalisation which in turn suggests the existence of a new strongly correlated electron liquid at low electron densities.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
