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Electron--electron repulsion, on the one hand, can result in bound pair, which has heavy effective mass. On the other hand, it is also the cause of Mott insulator. We study the effect of a staggered magnetic field on a Hubbard model. We find that a bound pair with large energy bandwidth can be formed under the resonant staggered field, being the half of Hubbard repulsion strength. Accordingly, the system exhibits following dynamical behaviors: (i) When an electric field is applied, fast bound pair Bloch oscillation occurs, while a single electron is frozen. (ii) When a quenching resonant field is applied to an initial antiferromagnetic Mott insulating state, the final state becomes doublon conducting state manifested by the non-zero $eta$ correlator and large charge fluctuation. Our finding indicates that the cooperation of electron-electron correlation and modulated external field can induce novel quench dynamics.
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This
We report on the observation of a strain-induced insulator state in ferromagnetic La_0.7Sr_0.3CoO_3 films. Tensile strain above 1% is found to enhance the resistivity by several orders of magnitude. Reversible strain of 0.15% applied using a piezoele
We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is accompanie
Lacunar spinel GaTa$_4$Se$_8$ is a unique example of spin-orbit coupled Mott insulator described by molecular $j_{text{eff}}!=!3/2$ states. It becomes superconducting at T$_c$=5.8K under pressure without doping. In this work, we show, this pressure-i
A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorde