ترغب بنشر مسار تعليمي؟ اضغط هنا

Quantum flicker noise in atomic and molecular junctions

82   0   0.0 ( 0 )
 نشر من قبل Dvira Segal
 تاريخ النشر 2021
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We report on a quantum form of electronic flicker noise in nanoscale conductors that contains valuable information on quantum transport. This noise is experimentally identified in atomic and molecular junctions, and theoretically analyzed by considering quantum interference due to fluctuating scatterers. Using conductance, shot noise, and flicker noise measurements, we show that the revealed quantum flicker noise uniquely depends on the distribution of transmission channels, a key characteristic of quantum conductors. This dependence opens the door for the application of flicker noise as a diagnostic probe for fundamental properties of quantum conductors and many-body quantum effects, a role that up to now has been performed by the experimentally less-accessible shot noise.

قيم البحث

اقرأ أيضاً

Using the method developed in a recent paper (Euro. Phys. J. B 92.8 (2019): 1-28) we consider $1/f$ noise in two-dimensional electron gas (2DEG). The electron coherence length of the system is considered as a basic parameter for discretizing the spac e, inside which the dynamics of electrons is described by quantum mechanics, while for length scales much larger than it the dynamics is semi-classical. For our model, which is based on the Thomas-Fermi-Dirac approximation, there are two control parameters: temperature $T$ and the disorder strength ($Delta$). Our Monte Carlo studies show that the system exhibits $1/f$ noise related to the electronic avalanche size, which can serve as a model for describing the experimentally observed flicker noise in 2DEG. The power spectrum of our model scales with frequency with an exponent in the interval $0.3<alpha_{PS}<0.6$. We numerically show that the electronic avalanches are scale-invariant with power-law behaviors in and out of the metal-insulator transition line.
Fluctuations pose fundamental limitations in making sensitive measurements, yet at the same time, noise unravels properties that are inaccessible at the level of the averaged signal. In electronic devices, shot noise arises from the discrete nature o f charge carriers and it increases linearly with the applied voltage according to the celebrated Schottky formula. Nonetheless, measurements of shot noise in atomic-scale junctions at high voltage reveal significant nonlinear (anomalous) behavior, which varies from sample to sample, and has no specific trend. Here, we provide a viable, unifying explanation for these diverse observations based on the theory of quantum coherent transport. Our formula for the anomalous shot noise relies on---and allows us to resolve---two key characteristics of a conducting junction: The structure of the transmission function at the vicinity of the Fermi energy and the asymmetry of the bias voltage drop at the contacts. We tested our theory on high voltage shot noise measurements on Au atomic scale junctions and demonstrated a quantitative agreement, recovering both the enhancement and suppression of shot noise as observed in different junctions. The good theory-experiment correspondence supports our modelling and emphasizes that the asymmetry of the bias drop on the contacts is a key factor in nanoscale electronic transport, which may substantially impact electronic signals even in incomplex structures.
We experimentally study the effect of different scattering potentials on the flicker noise observed in graphene devices on silica substrates. The noise in nominally identical devices is seen to behave in two distinct ways as a function of carrier con centration, changing either monotonically or nonmonotonically. We attribute this to the interplay between long- and short-range scattering mechanisms. Water is found to significantly enhance the noise magnitude and change the type of the noise behaviour. By using a simple model, we show that water is a source of long-range scattering.
Scattering of charge carriers and flicker noise in electrical transport are the central performance limiting factors in electronic devices, but their microscopic origin in molybdenum disulphide~(MoS$_2$)-based field effect transistors remains poorly understood. Here, we show that both carrier scattering and low-frequency $1/f$ noise in mechanically exfoliated ultra-thin MoS$_2$ layers are determined by the localized trap states located within the MoS$_2$ channel itself. The trap states not only act as Coulomb scattering centers that determine transport in both equilibrium ($eV< k_BT$) and non-equilibrium ($eV>k_BT$) regimes, where $V$ and $T$ are the source drain bias and temperature respectively, but also exchange carriers with the channel to produce the conductivity noise. The internal origin of the trap states was further confirmed by studying noise in MoS$_2$ films deposited on crystalline boron nitride substrates. Possible origin and nature of the trap states is also discussed.
Low frequency noise close to the carrier remains little explored in spin torque nano oscillators. However, it is crucial to investigate as it limits the oscillators frequency stability. This work addresses the low offset frequency flicker noise of a TMR-based spin-torque vortex oscillator in the regime of large amplitude steady oscillations. We first phenomenologically expand the nonlinear auto-oscillator theory aiming to reveal the properties of this noise. We then present a thorough experimental study of the oscillators $1/f$ flicker noise and discuss the results based on the theoretical predictions. Hereby, we connect the oscillators nonlinear dynamics with the concept of flicker noise and furthermore refer to the influence of a standard $1/f$ noise description based on the Hooge formula, taking into account the non-constant magnetic oscillation volume, which contributes to the magnetoresistance.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا