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This work demonstrates the effectiveness of the high-pressure method for the production of graphite and diamond with a high degree of boron doping using adamantanecarborane mixture as a precursor. At 8 GPa and $1700 ^{o}C$, graphite is obtained from adamantane $C_{10}H_{16}$, whereas microcrystals of boron-doped diamond (2{div}2.5 at.% of boron) are synthesized from a mixture of adamantane and ortho-carborane $C_{2}B_{10}H_{12}$ (atomic ratio B:C = 5:95). This result shows convincingly the catalytical activity of boron in the synthesis of diamond under high pressure. At pressures lower than 7 GPa, only graphite is synthesized from the adamantane and carborane mixture. Graphitization starts at quite low temperatures (below $1400 ^{o}C$) and an increase in temperature simultaneously increases boron content and the quality of the graphite crystal lattice. Thorough study of the material structure allows us to assume that the substitutional boron atoms are distributed periodically and equidistantly from each other in the graphite layers at high boron concentrations (>1 at.%). The theoretical arguments and model ab initio calculations confirm this assumption and explain the experimentally observed boron concentrations.
Theoretical predictions of pressure-induced phase transformations often become long-standing enigmas because of limitations of contemporary available experimental possibilities. Hitherto the existence of a non-icosahedral boron allotrope has been one
This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30,GPa
A first cobalt boride with the Co:B ratio below 1:1, Co5B16, was synthesized under high-pressure high-temperature conditions. It has a unique orthorhombic structure (space group Pmma, a = 19.1736(12), b = 2.9329(1), and c = 5.4886(2) {AA}, R1 (all da
Electrotarnsport and magnetic properties of new phases in the system Cr-GaSb were studied. The samples were prepared by high-pressure (P=6-8 GPa) high-temperature treatment and identified by x-ray diffraction and scanning electron microscopy (SEM). O
Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concen