ترغب بنشر مسار تعليمي؟ اضغط هنا

Nonlinear intensity dependence of terahertz edge photocurrents in graphene

87   0   0.0 ( 0 )
 نشر من قبل Sergey Ganichev
 تاريخ النشر 2021
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We report on the observation of terahertz radiation induced edge photogalvanic currents in graphene, which are nonlinear in intensity. The increase of the radiation intensities up to MW/cm$^2$ results in a complex nonlinear intensity dependence of the photocurrent. The nonlinearity is controlled by the back gate voltage, temperature and radiation frequency. A microscopic theory of the nonlinear edge photocurrent is developed. Comparison of the experimental data and theory demonstrates that the nonlinearity of the photocurrent is caused by the interplay of two mechanisms, i.e. by direct inter-band optical transitions and Drude-like absorption. Both photocurrents saturate at high intensities, but have different intensity dependencies and saturation intensities. The total photocurrent shows a complex sign-alternating intensity dependence. The functional behaviour of the saturation intensities and amplitudes of both kinds of photogalvanic currents depending on gate voltages, temperature, radiation frequency and polarization is in a good agreement with the developed theory.



قيم البحث

اقرأ أيضاً

150 - J. Karch , C. Drexler , P. Olbrich 2011
We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding d irection reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.
We use the terahertz (THz) emission spectroscopy to study femtosecond photocurrent dynamics in the prototypical 2D semiconductor, transition metal dichalcogenide MoSe$_2$. We identify several distinct mechanisms producing THz radiation in response to an ultrashort ($30,$fs) optical excitation in a bilayer (BL) and a multilayer (ML) sample. In the ML, the THz radiation is generated at a picosecond timescale by out-of-plane currents due to the drift of photoexcited charge carriers in the surface electric field. The BL emission is generated by an in-plane shift current. Finally, we observe oscillations at about $23,$THz in the emission from the BL sample. We attribute the oscillations to quantum beats between two excitonic states with energetic separation of $sim100,$meV.
We observe that the illumination of unbiased graphene in the quantum Hall regime with polarized terahertz laser radiation results in a direct edge current. This photocurrent is caused by an imbalance of persistent edge currents, which are driven out of thermal equilibrium by indirect transitions within the chiral edge channel. The direction of the edge photocurrent is determined by the polarity of the external magnetic field, while its magnitude depends on the radiation polarization. The microscopic theory developed in this paper describes well the experimental data.
In this paper, we calculated the dielectric function, the loss function, the magnetoplasmon dispersion relation and the temperature-induced transitions for graphene in a uniform perpendicular magnetic field B. The calculations were performed using th e Peierls tight-binding model to obtain the energy band structure and the random-phase approximation to determine the collective plasma excitation spectrum. The single-particle and collective excitations have been precisely identified based on the resonant peaks in the loss function. The critical wave vector at which plasmon damping takes place is clearly established. This critical wave vector depends on the magnetic field strength as well as the levels between which the transition takes place. The temperature effects were also investigated. At finite temperature, there are plasma resonances induced by the Fermi distribution function. Whether such plasmons exist is mainly determined by the field strength, temperature, and momentum. The inelastic light scattering spectroscopies could be used to verify the magnetic field and temperature induced plasmons.
122 - C. Casiraghi 2009
Here we use pristine graphene samples in order to analyze how the Raman peaks intensity, measured at 2.4 eV and 1.96 eV excitation energy, changes with the amount of doping. The use of pristine graphene allows investigating the intensity dependence c lose to the Dirac point. We show that the G peak intensity is independent on the doping, while the 2D peak intensity strongly decreases for increasing doping. Analyzing this dependence in the framework of a fully resonant process, we found that the total electron-phonon scattering rate is ~40 meV at 2.4 eV.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا