ترغب بنشر مسار تعليمي؟ اضغط هنا

Ni$_{80}$Fe$_{20}$ Nanotubes with Optimized Spintronic Functionalities Prepared by Atomic Layer Deposition

355   0   0.0 ( 0 )
 نشر من قبل Maria Carmen Giordano Ms
 تاريخ النشر 2021
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Permalloy Ni$_{80}$Fe$_{20}$ is one of the key magnetic materials in the field of magnonics. Its potential would be further unveiled if it could be deposited in three dimensional (3D) architectures of sizes down to the nanometer. Atomic Layer Deposition, ALD, is the technique of choice for covering arbitrary shapes with homogeneous thin films. Early successes with ferromagnetic materials include nickel and cobalt. Still, challenges in depositing ferromagnetic alloys reside in the synthesis via decomposing the consituent elements at the same temperature and homogeneously. We report plasma-enhanced ALD to prepare permalloy Ni$_{80}$Fe$_{20}$ thin films and nanotubes using nickelocene and iron(III) tert-butoxide as metal precursors, water as the oxidant agent and an in-cycle plasma enhanced reduction step with hydrogen. We have optimized the ALD cycle in terms of Ni:Fe atomic ratio and functional properties. We obtained a Gilbert damping of 0.013, a resistivity of 28 $muOmega$cm and an anisotropic magnetoresistance effect of 5.6 $%$ in the planar thin film geometry. We demonstrate that the process also works for covering GaAs nanowires, resulting in permalloy nanotubes with high aspect ratios and diameters of about 150 nm. Individual nanotubes were investigated in terms of crystal phase, composition and spin-dynamic response by microfocused Brillouin Light Scattering. Our results enable NiFe-based 3D spintronics and magnonic devices in curved and complex topology operated in the GHz frequency regime.

قيم البحث

اقرأ أيضاً

Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$ multilayers on S ilicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-layer growth with electron density contrast and absence of chemical intermixing, down to a periodicity of 2 atomic layers.
Despite many efforts the origin of a ferromagnetic (FM) response in ZnMnO and ZnCoO is still not clear. Magnetic investigations of our samples, not discussed here, show that the room temperature FM response is observed only in alloys with a non-unifo rm Mn or Co distribution. Thus, the control of their distribution is crucial for explanation of contradicted magnetic properties of ZnCoO and ZnMnO reported till now. In the present review we discuss advantages of the Atomic Layer Deposition (ALD) growth method, which enables us to control uniformity of ZnMnO and ZnCoO alloys. Properties of ZnO, ZnMnO and ZnCoO films grown by the ALD are discussed.
Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (alpha-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by c onventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.
SrIrO$_3$ with its large spin-orbit coupling and low charge conductivity has emerged as a potential candidate for efficient spin-orbit torque magnetization control in spintronic devices. We here report on the influence of an interfacial oxide layer o n spin pumping experiments in Ni$_{80}$Fe$_{20}$ (NiFe)/SrIrO$_3$ bilayer heterostructures. To investigate this scenario we have carried out broadband ferromagnetic resonance (BBFMR) measurements, which indicate the presence of an interfacial antiferromagnetic oxide layer. We performed in-plane BBFMR experiments at cryogenic temperatures, which allowed us to simultaneously study dynamic spin pumping properties (Gilbert damping) and static magnetic properties (such as the effective magnetization and magnetic anisotropy). The results for NiFe/SrIrO$_3$ bilayer thin films were analyzed and compared to those from a NiFe/NbN/SrIrO$_3$ trilayer reference sample, where a spin-transparent, ultra-thin NbN layer was inserted to prevent oxidation of NiFe. At low temperatures, we observe substantial differences in the magnetization dynamics parameters of these samples, which can be explained by an antiferromagnetic interfacial layer in the NiFe/SrIrO$_3$ bilayers.
308 - Valerie Brien 2020
The preparation in thin film form of the known icosahedral phase in Ti-Ni-Zr bulk alloys has been investigated as a function of substrate temperature. Films were deposited by Pulsed Laser Deposition on sapphire substrates at temperatures ranging from room temperature to 350$^circ$C. Morphological and structural modifications have been followed by grazing incidence and $theta$-2$theta$ X-ray diffraction, transmission electron diffraction and imaging. Chemical composition has been analysed by Electron Probe Micro-Analysis. The in-depth variation of composition has been studied by Secondary Neutral Mass Spectroscopy. We show that Pulsed Laser Deposition at 275$^circ$C makes the formation of a 1 m thick film of Ti-Ni-Zr quasicrystalline textured nanocrystallites possible.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا