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We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier heat capacity $c_{GBL}$ changes from $c_{GBL} simeq 2.37$ at $T lesssim 300$~K to $c_{GBL} simeq 6.58$ at elevated temperatures. These values are markedly differentfrom the heat capacity of classical two-dimensional carriers with $c = 1$. The obtained results can be useful for the optimization of different GL- and GBL-based high-speed devices.
We propose a hydrodynamic model describing steady-state and dynamic electron and hole transport properties of graphene structures which accounts for the features of the electron and hole spectra. It is intended for electron-hole plasma in graphene ch
The superconducting pairing of electrons in doped graphene due to in-plane and out-of-plane phonons is considered. It is shown that the structure of the order parameter in the valley space substantially affects conditions of the pairing. Electron-hol
When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the ch
Band structure determines the motion of electrons in a solid, giving rise to exotic phenomena when properly engineered. Drawing an analogy between electrons and photons, artificially designed optical lattices indicate the possibility of a similar ban
We consider ground state of electron-hole graphene bilayer composed of two independently doped graphene layers when a condensate of spatially separated electron-hole pairs is formed. In the weak coupling regime the pairing affects only conduction ban