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What are the ground states of an interacting, low-density electron system? In the absence of disorder, it has long been expected that as the electron density is lowered, the exchange energy gained by aligning the electron spins should exceed the enhancement in the kinetic (Fermi) energy, leading to a (Bloch) ferromagnetic transition. At even lower densities, another transition to a (Wigner) solid, an ordered array of electrons, should occur. Experimental access to these regimes, however, has been limited because of the absence of a material platform that supports an electron system with very high-quality (low disorder) and low density simultaneously. Here we explore the ground states of interacting electrons in an exceptionally-clean, two-dimensional electron system confined to a modulation-doped AlAs quantum well. The large electron effective mass in this system allows us to reach very large values of the interaction parameter $r_s$, defined as the ratio of the Coulomb to Fermi energies. As we lower the electron density via gate bias, we find a sequence of phases, qualitatively consistent with the above scenario: a paramagnetic phase at large densities, a spontaneous transition to a ferromagnetic state when $r_s$ surpasses 35, and then a phase with strongly non-linear current-voltage characteristics, suggestive of a pinned Wigner solid, when $r_s$ exceeds $simeq 38$. However, our sample makes a transition to an insulating state at $r_ssimeq 27$, preceding the onset of the spontaneous ferromagnetism, implying that, besides interaction, the role of disorder must also be taken into account in understanding the different phases of a realistic dilute electron system.
Large fluctuations of conductivity with time are observed in a low-mobility two-dimensional electron system in silicon at low electron densities $n_s$ and temperatures. A dramatic increase of the noise power ($propto 1/f^{alpha}$) as $n_s$ is reduced
We have used a field-penetration method to measure thermodynamic compressibility of a moderately interacting two-dimensional electron system ($r_{s}$ $approx$ 0.5-3) in a three terminal GaAs/AlGaAs device, fabricated with an epitaxial lift-off techni
We study a two-dimensional electron system where the electrons occupy two conduction band valleys with anisotropic Fermi contours and strain-tunable occupation. We observe persistent quantum Hall states at filling factors $ u = 1/3$ and 5/3 even at z
Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction $ u = 1/3$) and
We report thermopower ($S$) and electrical resistivity ($rho_{2DES}$) measurements in low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We observe at temp