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Graphene, a monolayer of carbon atoms packed into a two-dimensional crystal structure, attracted intense attention owing to its unique structure and optical, electronic properties. Recent advances in chemical vapor deposition (CVD) have led to the batch production of high quality graphene on metal foils. However, further applications are required in the way these graphenes are transferred from their growth substrates onto the target substrate. Here, we report a sublimable carrier method that allows the graphene to be transferred with high quality onto arbitrary substrates, including semiconductor, metal and organic substrates. The intrinsic problems of the residue and environmentally unfriendly organic solvents have been solved due to the polymer-free process. Optical microscopy, scanning electron microscopy (SEM) and Raman spectroscopy demonstrate the high quality and clean surface of the transferred graphene. This work provides a new way of optimizing graphene transfer and widens the applications of graphene in large-scale 2D electronics.
Metal halide perovskites single-crystalline thin films (SCTFs) have recently emerged as promising materials for the next generation of optoelectronic devices due to their superior intrinsic properties. However, it is still challenging to transfer and
We show that it is possible to prepare and identify ultra--thin sheets of graphene on crystalline substrates such as SrTiO$_3$, TiO$_2$, Al$_2$O$_3$ and CaF$_2$ by standard techniques (mechanical exfoliation, optical and atomic force microscopy). On
This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible alternative to silic
Single atoms and few-atom nanoclusters are of high interest in catalysis and plasmonics, but pathways for their fabrication and stable placement remain scarce. We report here the self-assembly of room-temperature-stable single indium (In) atoms and f
We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA cleaning step to improve the surface quality. In contrast to conventional fabric