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Recent experiments have measured local uniaxial strain fields in twisted bilayer graphene (TBG). Our calculations found that the finite Berry curvature generated by breaking the sublattice symmetry and the band proximity between narrow bands in these TBG induces a giant Berry dipole of order 10,nm or larger. The large Berry dipole leads to transverse topological non-linear charge currents which dominates over the linear bulk valley current at experimentally accessible crossover in-plane electric field of $sim 0.1 {rm mV} / mu rm{m}$. This anomalous Hall effect, due to Berry dipole, is strongly tunable by the strain parameters, electron fillings, gap size, and temperature.
Recent studies have shown that moir{e} flat bands in a twisted bilayer graphene(TBG) can acquire nontrivial Berry curvatures when aligned with hexagonal boron nitride substrate [1, 2], which can be manifested as a correlated Chern insulator near the
Twisted graphene bilayers provide a versatile platform to engineer metamaterials with novel emergent properties by exploiting the resulting geometric moir{e} superlattice. Such superlattices are known to host bulk valley currents at tiny angles ($alp
We investigate the band structure of twisted monolayer-bilayer graphene (tMBG), or twisted graphene on bilayer graphene (tGBG), as a function of twist angles and perpendicular electric fields in search of optimum conditions for achieving isolated nea
A variety of correlated phases have recently emerged in select twisted van der Waals (vdW) heterostructures owing to their flat electronic dispersions. In particular, heterostructures of twisted double bilayer graphene (tDBG) manifest electric field-
Van der Waals heterostructures obtained by artificially stacking two-dimensional crystals represent the frontier of material engineering, demonstrating properties superior to those of the starting materials. Fine control of the interlayer twist angle