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We show experimentally through time-resolved conductance measurements that magnetization reversal through domain wall motion in sub-100 nm diameter magnetic tunnel junctions is dominated by two distinct stochastic effects. The first involves the incubation time related to domain wall nucleation, while the second results from stochastic motion in the Walker regime. Micromagnetics simulations reveal several contributions to temporal pinning of the wall near the disk center, including Bloch point nucleation and wall precession. We show that a reproducible ballistic motion is recovered when Bloch and Neel wall profiles become degenerate in energy in optimally sized disks, which enables quasi-deterministic motion.
Electric field effect on magnetism is an appealing technique for manipulating the magnetization at a low cost of energy. Here, we show that the local magnetization of the ultra-thin Co film can be switched by just applying a gate electric field witho
The ideal intrinsic barriers to domain switching in c-phase PbTiO_3 (PTO), PbZrO_3 (PZO), and PbZr_{1-x}Ti_xO_3 (PZT) are investigated via first-principles computational methods. The effects of epitaxial strain on the atomic structure, ferroelectric
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices
We study both experimentally and theoretically the driven motion of domain walls in extended amorphous magnetic films patterned with a periodic array of asymmetric holes. We find two crossed ratchet effects of opposite sign that change the preferred
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain wall moti