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Recently, a layered ferroelectric CuInP2Se6 was shown to exhibit domain walls with locally enhanced piezoresponse - a striking departure from the observations of nominally zero piezoresponse in most ferroelectrics. Although it was proposed that such bright domain walls are phase-boundaries between ferri- and antiferroelectrically ordered regions of the materials, the physical mechanisms behind the existence and response of these boundaries remain to be understood. Here, using Landau-Ginzburg-Devonshire phenomenology combined with four sub-lattices model, we describe quantitatively the bright-contrast and dark-contrast domain boundaries between the antiferroelectric, ferroelectric or ferrielectric long-range ordered phases in a layered ferroelectric-antiferroelectric ferroics, such as CuInP2(S1-ySey)6
Magnetoelectric coupling in ferromagnet/multiferroic systems is often manifested in the exchange bias effect, which may have combined contributions from multiple sources, such as domain walls, chemical defects or strain. In this study we magnetically
It is well documented that subjecting perpendicular magnetic films which exhibit the interfacial Dzyaloshinskii-Moriya interaction (DMI) to an in-plane magnetic field results in a domain wall (DW) energy, $sigma$, that is highly anisotropic with resp
The charged domain walls in ferroelectric materials exhibit intriguing physical properties. We examine herein the charged-domain-wall structures in Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$ using transmission electron microscopy. When viewed along the [001] axis,
The ease with which domain walls (DWs) in ferroelectric materials can be written and erased provides a versatile way to dynamically modulate heat fluxes. In this work we evaluate the thermal boundary resistance (TBR) of 180$^{circ}$ DWs in prototype
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique robustness, ar