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The low-energy electronic structure, including the Fermi surface topology, of the itinerant metamagnet Sr$_{4}$Ru$_{3}$O$_{10}$ is investigated for the first time by synchrotron-based angle-resolved photoemission. Well-defined quasiparticle band dispersions with matrix element dependencies on photon energy or photon polarization are presented. Four bands crossing the Fermi-level, giving rise to four Fermi surface sheets are resolved; and their complete topography, effective mass as well as their electron and hole character are determined. These data reveal the presence of kink structures in the near-Fermi-level band dispersion, with energies ranging from 30 meV to 69 meV. Together with previously reported Raman spectroscopy and lattice dynamic calculation studies, the data suggest that these kinks originate from strong electron-phonon coupling present in Sr$_{4}$Ru$_{3}$O$_{10}$. Considering that the kink structures of Sr$_{4}$Ru$_{3}$O$_{10}$ are similar to those of the other three members of the Ruddlesden Popper structured ruthenates, the possible universality of strong coupling of electrons to oxygen-related phonons in Sr$_{n+1}$Ru$_{n}$O$_{3n+1}$ compounds is proposed.
We report a detailed study of the magnetization modulus as a function of temperature and applied magnetic field under varying angle in Sr$_{4}$Ru$_{3}$O$_{10}$ close to the metamagnetic transition at $H_{c}backsimeq 2.5,$T for $H perp c$. We confirm
We report the temperature variation of the $^{119}$Sn-M{o}ssbauer spectra of the antiperovskite (inverse perovskite) oxide superconductor Sr$_{3-x}$SnO. Both superconductive (Sr-deficient) and non-superconductive (nearly stoichiometric) samples exhib
The layered 2D-material MoTe$_2$ in the T$_d$ crystal phase is a semimetal which has theoretically been predicted to possess topologically non-trivial bands corresponding to Weyl fermions. Clear experimental evidence by angle-resolved photoemission s
Large non-saturating magnetoresistance has been observed in various materials and electron-hole compensation has been regarded as one of the main mechanisms. Here we present a detailed study of the angle-dependent Shubnikov -de Haas effect on large m
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4]