ترغب بنشر مسار تعليمي؟ اضغط هنا

Fermi surface and kink structures in Sr$_{4}$Ru$_{3}$O$_{10}$ revealed by synchrotron-based ARPES

78   0   0.0 ( 0 )
 نشر من قبل Prosper Ngabonziza
 تاريخ النشر 2020
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The low-energy electronic structure, including the Fermi surface topology, of the itinerant metamagnet Sr$_{4}$Ru$_{3}$O$_{10}$ is investigated for the first time by synchrotron-based angle-resolved photoemission. Well-defined quasiparticle band dispersions with matrix element dependencies on photon energy or photon polarization are presented. Four bands crossing the Fermi-level, giving rise to four Fermi surface sheets are resolved; and their complete topography, effective mass as well as their electron and hole character are determined. These data reveal the presence of kink structures in the near-Fermi-level band dispersion, with energies ranging from 30 meV to 69 meV. Together with previously reported Raman spectroscopy and lattice dynamic calculation studies, the data suggest that these kinks originate from strong electron-phonon coupling present in Sr$_{4}$Ru$_{3}$O$_{10}$. Considering that the kink structures of Sr$_{4}$Ru$_{3}$O$_{10}$ are similar to those of the other three members of the Ruddlesden Popper structured ruthenates, the possible universality of strong coupling of electrons to oxygen-related phonons in Sr$_{n+1}$Ru$_{n}$O$_{3n+1}$ compounds is proposed.


قيم البحث

اقرأ أيضاً

We report a detailed study of the magnetization modulus as a function of temperature and applied magnetic field under varying angle in Sr$_{4}$Ru$_{3}$O$_{10}$ close to the metamagnetic transition at $H_{c}backsimeq 2.5,$T for $H perp c$. We confirm that the double-feature at $H_{c}$ is robust without further splitting for temperatures below 1.8 K down to 0.48 K. The metamagnetism in Sr$_{4}$Ru$_{3}$O$_{10}$ is accompanied by a reduction of the magnetic moment in the plane of rotation and large field-hysteretic behavior. The double anomaly shifts to higher fields by rotating the field from $H,perp ,c$ to $H,parallel,c$. We compare our experimental findings with numerical simulations based on spin reorientation models caused by intrinsic magnetocrystalline anisotropy and Zeeman effect. Crystal anisotropy is able to explain a metamagnetic transition in the ferromagnetic ordered system Sr$_{4}$Ru$_{3}$O$_{10}$, but a Dzyaloshinskii-Moriya term is crucial to account for a reduction of the magnetic moment as discovered in the experiments.
157 - Atsutoshi Ikeda 2019
We report the temperature variation of the $^{119}$Sn-M{o}ssbauer spectra of the antiperovskite (inverse perovskite) oxide superconductor Sr$_{3-x}$SnO. Both superconductive (Sr-deficient) and non-superconductive (nearly stoichiometric) samples exhib it major $gamma$-ray absorption with isomer shift similar to that of Mg$_2$Sn. This fact shows that Sr$_{3-x}$SnO contains the metallic anion Sn$^{4-}$, which is rare especially among oxides. In both samples, we observed another $gamma$-ray absorption with a larger isomer shift, indicating that there is another ionic state of Sn with a higher oxidation number. The temperature dependence of the absorption intensities reveals that the Sn ions exhibiting larger isomer shifts have a lower energy of the local vibration. The larger isomer shift and lower vibration energy are consistent with the values estimated from the first-principles calculations for hypothetical structures with various Sr-deficiency arrangements. Therefore, we conclude that the additional $gamma$-ray absorptions originate from the Sn atoms neighboring the Sr deficiency.
The layered 2D-material MoTe$_2$ in the T$_d$ crystal phase is a semimetal which has theoretically been predicted to possess topologically non-trivial bands corresponding to Weyl fermions. Clear experimental evidence by angle-resolved photoemission s pectroscopy (ARPES) is, however, lacking, which calls for a careful examination of the relation between ground state band structure calculations and ARPES intensity plots. Here we report a study of the near Fermi-energy band structure of MoTe$_2$(T$_d$) by means of ARPES measurements, density functional theory, and one-step-model ARPES calculations. Good agreement between theory and experiment is obtained. We analyze the orbital character of the surface bands and its relation to the ARPES polarization dependence. We find that light polarization has a major efect on which bands can be observed by ARPES. For s-polarized light, the ARPES intensity is dominated by subsurface Mo d orbitals, while p-polarized light reveals the bands composed mainly derived from Te p orbitals. Suitable light polarization for observing either electron or hole pocket are determined
Large non-saturating magnetoresistance has been observed in various materials and electron-hole compensation has been regarded as one of the main mechanisms. Here we present a detailed study of the angle-dependent Shubnikov -de Haas effect on large m agnetoresistance material pyrite-type PtBi$_{2}$, which allows us to experimentally reconstruct its Fermi-surface structure and extract the physical properties of each pocket. We find its Fermi surface contains four types of pockets in the Brillouin zone: three ellipsoid-like hole pockets $alpha$ with C$_4$ symmetry located on the edges (M points), one intricate electron pocket $beta$ merged from four ellipsoids along [111] located on the corners (R points), two smooth and cambered octahedrons $gamma$ (electron) and $delta$ (hole) on the center ($Gamma$ point). The deduced carrier densities of electrons and holes from the volume of pockets prove carrier compensation. This compensation at low temperatures is also supported by fitting the field dependence of Hall and magnetoresistance at different temperatures. We conclude that the compensation is the main mechanism for the large non-saturating magnetoresistance in pyrite-type PtBi$_{2}$. We found the hole pockets {alpha} may contribute major mobility because of their light masses and anisotropy to relatively avoid large-angle scattering at low temperature. This may be a common feature of semimetals with large magnetoresistance. The found sub-quadratic magnetoresistance in high field is probably due to field-dependent mobilities, another feature of semimetals under high magnetic fields.
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilayers [7-11]. Here, we apply angle resolved photoemission spectroscopy with submicrometer spatial resolution ($mu$ARPES) to visualise the layer-dependent valence band structure of mechanically exfoliated crystals of InSe. We show that for 1 layer and 2 layer InSe the valence band maxima are away from the $mathbf{Gamma}$-point, forming an indirect gap, with the conduction band edge known to be at the $mathbf{Gamma}$-point. In contrast, for six or more layers the bandgap becomes direct, in good agreement with theoretical predictions. The high-quality monolayer and bilayer samples enables us to resolve, in the photoluminescence spectra, the band-edge exciton (A) from the exciton (B) involving holes in a pair of deeper valence bands, degenerate at $mathbf{Gamma}$, with the splitting that agrees with both $mu$ARPES data and the results of DFT modelling. Due to the difference in symmetry between these two valence bands, light emitted by the A-exciton should be predominantly polarised perpendicular to the plane of the two-dimensional crystal, which we have verified for few-layer InSe crystals.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا