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تسجيل مستخدم جديدPreparation, Characterization and electronic structure of Ti-doped Bi$_2$Se$_3$
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We report the preparation of high-quality single crystal of Bi$_2$Se$_3$, a well-known topological insulator and its Ti-doped compositions using Bridgeman technique. Prepared single crystals were characterized by x-ray diffraction (XRD) to check the crystalline structure and energy dispersive analysis of x-rays for composition analysis. The XRD data of Ti-doped compounds show a small shift with respect to normal Bi$_2$Se$_3$ indicating changes in the lattice parameters while the structure type remained unchanged; this also establishes that Ti goes to the intended substitution sites. All the above analysis establishes successful preparation of these crystals with high quality using Bridgman technique. We carried out x-ray photo-emission spectroscopy to study the composition via investigating the core level spectra. Bi$_2$Se$_3$ spectra exhibit sharp and distinct features for the core levels and absence of impurity features. The core level spectra of the Ti-doped sample exhibit distinct signal due to Ti core levels. The analysis of the spectral features reveal signature of plasmon excitation and final state satellites; a signature of finite electron correlation effect in the electronic structure.
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Electronic correlation is believed to play an important role in exotic phenomena such as insulator-metal transition, colossal magneto resistance and high temperature superconductivity in correlated electron systems. Recently, it has been shown that e
lectronic correlation may also be responsible for the formation of unconventional plasmons. Herewith, using a combination of angle-dependent spectroscopic ellipsometry, angle resolved photoemission spectroscopy and Hall measurements all as a function of temperature supported by first-principles calculations, the existence of low-loss high-energy correlated plasmons accompanied by spectral weight transfer, a fingerprint of electronic correlation, in topological insulator (Bi$_{0.8}$Sb$_{0.2}$)$_2$Se$_3$ is revealed. Upon cooling, the density of free charge carriers in the surface states decreases whereas those in the bulk states increase, and that the newly-discovered correlated plasmons are key to explaining this phenomenon. Our result shows the importance of electronic correlation in determining new correlated plasmons and opens a new path in engineering plasmonic-based topologically-insulating devices.
Magnetic susceptibility $chi$ of Bi$_{2-x}$Mn$_{x}$Se$_3$ ($x = 0.01-0.2$) was measured in the temperature range $4.2-300$ K. For all the samples, a Curie-Weiss behaviour of $chi(T)$ was revealed with effective magnetic moments of Mn ions correspondi
ng to the spin value S=5/2, which couple antiferromagnetically with the paramagnetic Curie temperature $Thetasim -50$ K. In addition, for the samples of nominal composition $x$ = 0.1 and 0.2 the effect of a hydrostatic pressure $P$ up to 2 kbar on $chi$ has been measured at fixed temperatures 78 and 300 K that allowed to estimate the pressure derivative of $Theta$ to be d$Theta$/d$Psim-0.8$ K/kbar. Based on the observed behaviour of $Theta$ with varied Mn concentration and pressure, a possible mechanism of interaction between localized Mn moments is discussed.
Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have been so far
effective as the compensation dopant. Considering that strong spin-orbit coupling (SOC) is essential for the topological surface states, a light element is undesirable as a dopant, because it weakens the strength of SOC. In this sense, Pb, which is the heaviest 2+ ion, located right next to Bi in the periodic table, is the most ideal p-type dopant for Bi$_2$Se$_3$. However, Pb-doping has so far failed to achieve p-type Bi$_2$Se$_3$ not only in thin films but also in bulk crystals. Here, by utilizing an interface engineering scheme, we have achieved the first Pb-doped p-type Bi$_2$Se$_3$ thin films. Furthermore, at heavy Pb-doping, the mobility turns out to be substantially higher than that of Ca-doped samples, indicating that Pb is a less disruptive dopant than Ca. With this SOC-preserving counter-doping scheme, it is now possible to fabricate Bi$_2$Se$_3$ samples with tunable Fermi levels without compromising their topological properties.
Doping Bi$_2$Se$_3$ by magnetic ions represents an interesting problem since it may break the time reversal symmetry needed to maintain the topological insulator character. Mn dopants in Bi$_2$Se$_3$ represent one of the most studied examples here. H
owever, there is a lot of open questions regarding their magnetic ordering. In the experimental literature different Curie temperatures or no ferromagnetic order at all are reported for comparable Mn concentrations. This suggests that magnetic ordering phenomena are complex and highly susceptible to different growth parameters, which are known to affect material defect concentrations. So far theory focused on Mn dopants in one possible position, and neglected relaxation effects as well as native defects. We have used ab initio methods to calculate the Bi$_2$Se$_3$ electronic structure influenced by magnetic Mn dopants, and exchange interactions between them. We have considered two possible Mn positions, the substitutional and interstitial one, and also native defects. We have found a sizable relaxation of atoms around Mn, which affects significantly magnetic interactions. Surprisingly, very strong interactions correspond to a specific position of Mn atoms separated by van der Waals gap. Based on the calculated data we performed spin dynamics simulations to examine systematically the resulting magnetic order for various defect contents. We have found under which conditions the experimentally measured Curie temperatures ${T_{rm{C}}}$ can be reproduced, noticing that interstitial Mn atoms appear to be important here. Our theory predicts the change of ${T_{rm{C}}}$ with a shift of Fermi level, which opens the way to tune the system magnetic properties by selective doping.
Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as the quantu
m anomalous Hall (QAH) effect with a chiral edge conduction and a quantized value of the Hall resistance ${R_{yx}}$. Here, we report on the emergence of distinct topological phases in paramagnetic Fe-doped (Bi,Sb)${_2}$Se${_3}$ heterostructures with varying structure architecture, doping, and magnetic and electric fields. Starting from a 3D-TI, a two-dimensional insulator appears at layer thicknesses below a critical value, which turns into an Anderson insulator for Fe concentrations sufficiently large to produce localization by magnetic disorder. With applying a magnetic field, a topological transition from the Anderson insulator to the QAH state occurs, which is driven by the formation of an exchange gap owing to a giant Zeeman splitting and reduced magnetic disorder. Topological phase diagram of (Bi,Sb)${_2}$Se${_3}$ allows exploration of intricate interplay of topological protection, magnetic disorder, and exchange splitting.
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