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The dielectric constant, which defines the polarization of the media, is a key quantity in condensed matter. It determines several electronic and optoelectronic properties important for a plethora of modern technologies from computer memory to field effect transistors and communication circuits. Moreover, the importance of the dielectric constant in describing electromagnetic interactions through screening plays a critical role in understanding fundamental molecular interactions. Here we show that despite its fundamental transcendence, the dielectric constant does not define unequivocally the dielectric properties of two-dimensional (2D) materials due to the locality of their electrostatic screening. Instead, the electronic polarizability correctly captures the dielectric nature of a 2D material which is united to other physical quantities in an atomically thin layer. We reveal a long-sought universal formalism where electronic, geometrical and dielectric properties are intrinsically correlated through the polarizability opening the door to probe quantities yet not directly measurable including the real covalent thickness of a layer. We unify the concept of dielectric properties in any material dimension finding a global dielectric anisotropy index defining their controllability through dimensionality.
The two-dimensional (2D) semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility and wide tunability of its band gap energy achieved by varying the layer thickness. All
Here, we examine the influence of surface chemical reactivity toward ambient gases on the performance of nanodevices based on two-dimensional materials beyond graphene and novel topological phases of matter. While surface oxidation in ambient conditi
Low-dimensional materials differ from their bulk counterpart in many respects. In particular, the screening of the Coulomb interaction is strongly reduced, which can have important consequences such as the significant increase of exciton binding ener
We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lase
Herein, we demonstrate that first-principles calculations can be used for mapping electronic properties of two-dimensional (2d) materials with respect to non-uniform strain. By investigating four representative single-layer 2d compounds with differen