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We investigate the influence of plasma treatments, especially a 0V-bias, potentially low damage O$_2$ plasma as well as a biased Ar/SF$_6$/O$_2$ plasma on shallow, negative nitrogen vacancy (NV$^-$) centers. We ignite and sustain using our 0V-bias plasma using purely inductive coupling. To this end, we pre-treat surfaces of high purity chemical vapor deposited single-crystal diamond (SCD). Subsequently, we create $sim$10 nm deep NV$^-$ centers via implantation and annealing. Onto the annealed SCD surface, we fabricate nanopillar structures that efficiently waveguide the photoluminescence (PL) of shallow NV$^-$. Characterizing single NV$^-$ inside these nanopillars, we find that the Ar/SF$_6$/O$_2$ plasma treatment quenches NV$^-$ PL even considering that the annealing and cleaning steps following ion implantation remove any surface termination. In contrast, for our 0V-bias as well as biased O$_2$ plasma, we observe stable NV$^-$ PL and low background fluorescence from the photonic nanostructures.
We demonstrate a robust experimental method for determining the depth of individual shallow Nitrogen-Vacancy (NV) centers in diamond with $sim1$ nm uncertainty. We use a confocal microscope to observe single NV centers and detect the proton nuclear m
In this manuscript, we outline a reliable procedure to manufacture photonic nanostructures from single-crystal diamond (SCD). Photonic nanostructures, in our case SCD nanopillars on thin (< 1$mu$m) platforms, are highly relevant for nanoscale sensing
We demonstrate a robust, scale-factor-free vector magnetometer, which uses a closed-loop frequency-locking scheme to simultaneously track Zeeman-split resonance pairs of nitrogen-vacancy (NV) centers in diamond. Compared with open-loop methodologies,
Fluorescent nanodiamonds containing negatively-charged nitrogen-vacancy (NV$^-$) centers are promising for a wide range of applications, such as for sensing, as fluorescence biomarkers, or to hyperpolarize nuclear spins. NV$^-$ centers are formed fro
The charge degree of freedom in solid-state defects fundamentally underpins the electronic spin degree of freedom, a workhorse of quantum technologies. Here we study charge state properties of individual near-surface nitrogen-vacancy (NV) centers in