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Due to high binding energy and oscillator strength, excitons in thin flakes of transition metal dichalcogenides constitute a perfect foundation for realizing a strongly coupled light-matter system. In this paper we investigate mono- and few-layer WSe$_2$ flakes encapsulated in hexagonal boron nitride and incorporated into a planar dielectric cavity. We use an open cavity design which provides tunability of the cavity mode energy by as much as 150 meV. We observe a strong coupling regime between the cavity photons and the neutral excitons in direct-bandgap monolayer WSe$_2$, as well as in few-layer WSe$_2$ flakes exhibiting indirect bandgap. We discuss the dependence of the excitons oscillator strength and resonance linewidth on the number of layers and predict the exciton-photon coupling strength.
We present a simple method to create an in-plane lateral potential in a semiconductor microcavity using a metal thin-film. Two types of potential are produced: a circular aperture and a one-dimensional (1D) periodic grating pattern. The amplitude of
We detail the influence of a magnetic field on exciton-polaritons inside a semiconductor microcavity. Magnetic field can be used as a tuning parameter for exciton and photon resonances. We discuss the change of the exciton energy, the oscillator stre
We present a systematic investigation of two-photon excitation processes in a GaAs-based microcavity in the strong-coupling regime. We observe second harmonic generation resonant to the upper and lower polariton level, which exhibits a strong depende
We present a comprehensive theoretical description of quantum well exciton-polaritons imbedded in a planar semiconductor microcavity. The exact non-local dielectric response of the quantum well exciton is treated in detail. The 4-spinor structure of
Monolayer transition metal dichalcogenides, known for exhibiting strong excitonic resonances, constitute a very interesting and versatile platform for investigation of light-matter interactions. In this work we report on a strong coupling regime betw