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In normal metals, the magnetic-moment of impurity-spins disappears below a characteristic Kondo temperature, TK. This marks the formation of a polarized cloud of conduction band electrons that screen the magnetic moment . In contrast, moments embedded in insulators remain unscreened at all temperatures. This raises the question about the fate of magnetic-moments in intermediate, pseudogap systems, such as graphene. In these systems coupling between the local moment and the conduction band electrons is predicted to drive a quantum phase-transition between a local-moment phase and a Kondo-screened singlet phase as illustrated in Fig. 1A. However, attempts to experimentally confirm these predictions and their intriguing consequences such as the ability to electrostatically tune magnetic-moments, have been elusive. Here we report the observation of Kondo screening and the quantum phase-transition between screened and unscreened phases of vacancy magnetic-moments in graphene. Using scanning-tunneling-microscopy (STM), spectroscopy (STS) and numerical-renormalization-group (NRG) calculations, we identified Kondo-screening by its spectroscopic signature and mapped the quantum phase-transition as a function of coupling strength and chemical potential. We show that the coupling strength can be tuned across this transition by variations in the local curvature and furthermore that the transition makes it possible to turn the magnetic-moment on and off with a gate voltage.
In normal metals, the magnetic moment of impurity spins disappears below a characteristic Kondo temperature, TK, where coupling with the conduction-band electrons produces an entangled state that screens the local moment. In contrast, moments embedde
Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed description is giv
We intercalate a van der Waals heterostructure of graphene and hexagonal Boron Nitride with Au, by encapsulation, and show that Au at the interface is two dimensional. A charge transfer upon current annealing indicates redistribution of Au and induce
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability. However, remote c
The effect of electronic interactions in graphene with vacancies or resonant scatterers is investigated. We apply dynamical mean-field theory in combination with quantum Monte Carlo simulations, which allow us to treat non-perturbatively quantum fluc