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Electronic states of the hybrid perovskite enable their promising applications as distinctive optoelectronic materials. The understanding of their electronic structures and charge characters remains highly controversial. The electronic mechanism such as reabsorption, Urbach tail and indirect band for interpreting dual-peak emissions is one of the controversial focuses. Herein, we report that through heterojunction enhanced exciton dissociation and global tracing of multiple radiative electronic states across wide temperature regions, we have succeeded in directly observing free carrier emissions from the hybrid lead bromide perovskite and clearly discriminating the direct continuum band and exciton states. The widely-concerned dual-peak emissions are clarified to be excitonic, arising from two types of exciton states of the perovskite. These excitons possess giant binding energies and superior phase stability compared to conventional inorganic semiconductors, providing important implications for exploiting the excitonic mechanism for realizing novel optoelectronic applications.
Forster Resonant Energy Transfer (FRET)-mediated exciton diffusion through artificial nanoscale building block assemblies could be used as a new optoelectronic design element to transport energy. However, so far nanocrystal (NC) systems supported onl
The surprising recent observation of highly emissive triplet-states in lead halide perovskites accounts for their orders-of-magnitude brighter optical signals and high quantum efficiencies compared to other semiconductors. This makes them attractive
Organic-inorganic halide perovskites are intrinsically unstable when exposed to moisture and/or light. Additionally, the presence of lead in many perovskites raises toxicity concerns. Herein is reported a thin film of BaZrS3, a lead-free chalcogenide
Bound states in the continuum (BICs) have attracted much attention in recent years due to the infinite quality factor (Q-factor) resonance and extremely localized field. In this study, BICs have been demonstrated by dielectric metasurfaces with hybri
The relaxation of high-energy hot carriers in semiconductors is known to involve the redistribution of energy between (i) hot and cold carriers and (ii) hot carriers and phonons. Over the past few years, these two processes have been identified in le