ﻻ يوجد ملخص باللغة العربية
Spin pumping by ferromagnetic resonance is one of the most common technique to determine spin hall angles, Edelstein lengths or spin diffusion lengths of a large variety of materials. In recent years, rising concerns have appeared regarding the interpretation of these experiments, underlining that the signal could arise purely from thermoelectric effects, rather than from coherent spin pumping. Here, we propose a method to evaluate the presence or absence of thermal effects in spin pumping signals, by combining bolometry and spin pumping by ferromagnetic resonance measurements, and comparing their timescale. Using a cavity to perform the experiments on PtPermalloy and La0.7Sr0.3MnO3Pt samples, we conclude on the absence of any measurable thermoelectric contribution such as the spin Seebeck and anomalous Nernst effects at resonance
The authors have investigated the contribution of the surface spin waves to spin pumping. A Pt/NiFe bilayer has been used for measuring spin waves and spin pumping signals simultaneously. The theoretical framework of spin pumping resulting from ferro
Spin transfer torque (STT) driven by a charge current plays a key role in magnetization switching in heavy-metal/ferromagnetic-metal structures. The STT efficiency defined by the ratio between the effective field due to STT and the current density, i
We systematically measured the DC voltage V_ISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet/platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite sp
We theoretically investigate a manipulation method of nonequilibrium spin accumulation in the paramagnetic normal metal of a spin pumping system, by using the spin precession motion combined with the spin diffusion transport. We demonstrate based on
We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exch