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تسجيل مستخدم جديدOptically coherent nitrogen-vacancy centers in {mu}m-thin etched diamond membranes
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Diamond membrane devices containing optically coherent nitrogen-vacancy (NV) centers are key to enable novel cryogenic experiments such as optical ground-state cooling of hybrid spin-mechanical systems and efficient entanglement distribution in quantum networks. Here, we report on the fabrication of a (3.4 $pm$ 0.2) {mu}m thin, smooth (surface roughness r$_q$ < 0.4 nm over an area of 20 {mu}m by 30 {mu}m diamond membrane containing individually resolvable, narrow linewidth (< 100 MHz) NV centers. We fabricate this sample via a combination of high energy electron irradiation, high temperature annealing, and an optimized etching sequence found via a systematic study of the diamond surface evolution on the microscopic level in different etch chemistries. While our particular device dimensions are optimized for cavity-enhanced entanglement generation between distant NV centers in open, tuneable micro-cavities, our results have implications for a broad range of quantum experiments that require the combination of narrow optical transitions and {mu}m-scale device geometry.
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The advancement of quantum optical science and technology with solid-state emitters such as nitrogen-vacancy (NV) centers in diamond critically relies on the coherence of the emitters optical transitions. A widely employed strategy to create NV cente
rs at precisely controlled locations is nitrogen ion implantation followed by a high-temperature annealing process. We report on experimental data directly correlating the NV center optical coherence to the origin of the nitrogen atom. These studies reveal low-strain, narrow-optical-linewidth ($<500$ MHz) NV centers formed from naturally-occurring $^{14}$N atoms. In contrast, NV centers formed from implanted $^{15}$N atoms exhibit significantly broadened optical transitions ($>1$ GHz) and higher strain. The data show that the poor optical coherence of the NV centers formed from implanted nitrogen is not due to an intrinsic effect related to the diamond or isotope. These results have immediate implications for the positioning accuracy of current NV center creation protocols and point to the need to further investigate the influence of lattice damage on the coherence of NV centers from implanted ions.
A study of the photophysical properties of nitrogen-vacancy (NV) color centers in diamond nanocrystals of size of 50~nm or below is carried out by means of second-order time-intensity photon correlation and cross-correlation measurements as a functio
n of the excitation power for both pure charge states, neutral and negatively charged, as well as for the photochromic state, where the center switches between both states at any power. A dedicated three-level model implying a shelving level is developed to extract the relevant photophysical parameters coupling all three levels. Our analysis confirms the very existence of the shelving level for the neutral NV center. It is found that it plays a negligible role on the photophysics of this center, whereas it is responsible for an increasing photon bunching behavior of the negative NV center with increasing power. From the photophysical parameters, we infer a quantum efficiency for both centers, showing that it remains close to unity for the neutral center over the entire power range, whereas it drops with increasing power from near unity to approximately 0.5 for the negative center. The photophysics of the photochromic center reveals a rich phenomenology that is to a large extent dominated by that of the negative state, in agreement with the excess charge release of the negative center being much slower than the photon emission process.
We report quantitative measurements of optically detected ferromagnetic resonance (ODFMR) of ferromagnetic thin films that use nitrogen-vacancy (NV) centers in diamonds to transduce FMR into a fluorescence intensity variation. To uncover the mechanis
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