ﻻ يوجد ملخص باللغة العربية
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^circ$C and 1550$^circ$C. The structure and stoichiometry of this compound are investigated by high-resolution scanning transmission electron microscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along <0001>. The first one exhibits a $times$3 periodicity along <10-10> with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by equal number of Si and Al atoms. Assuming a semiconducting alloy, which is expected to have a wide band gap, a range of stoichiometries is proposed, Al$_{5+alpha}$Si$_{5+delta}$N$_{12}$, with $alpha$ being between 0 and 1/3 and $delta$ between 0 and 1/4.
The observation of $^{26}$Al gives us the proof of active nucleosynthesis in the Milky Way. However the identification of the main producers of $^{26}$Al is still a matter of debate. Many sites have been proposed, but our poor knowledge of the nuclea
The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity measuremen
We report new results for the elastic constants studied in Faraday and Cotton-Mouton geometry in Tb$_3$Ga$_5$O$_{12}$ (TGG), a frustrated magnetic substance with strong spin-phonon interaction and remarkable crystal-electric-field (CEF) effects. We a
The structure of the $(sqrt{5}timessqrt{5})R26.6^circ$ reconstruction of LaAlO$_3$ (001) has been determined using transmission electron diffraction combined with direct methods. The structure is relatively simple, consisting of a lanthanum oxide ter
In this paper, we solve the equation of the title under the assumption that $gcd(x,d)=1$ and $ngeq 2$. This generalizes earlier work of the first author, Patel and Siksek [BPS16]. Our main tools include Frey-Hellegouarch curves and associated modular