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We have experimentally elucidated the correlation between inverse and direct Edelstein Effects (EEs) at Bi2O3/Cu interface by means of spin absorption method using lateral spin valve structure. The conversion coefficient {lambda} for the inverse EE is determined by the electron momentum scattering time in the interface, whereas the coefficient q for the direct EE is by the spin ejection time from the interface. For the Bi2O3/Cu interface, the spin ejection time was estimated to be ~ 53 fs and the momentum scattering time ~ 13 fs at room temperature, both of which contribute to the total momentum relaxation time that defines the resistivity of the interface. The effective spin Hall angle for the Bi2O3/Cu interface amounts to ~ 10% which is comparable to commonly used spin Hall material such as platinum. Interesting to note is that the experimentally obtained Edelstein resistances given by the output voltage divided by the injection current for direct and inverse effects are the same. Analysis based on our phenomenological model reveals that the larger the momentum scattering time, the more efficient direct EE; and the smaller spin ejection time, the more efficient inverse EE.
We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its magnitude
The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a sizeable orient
The spin dependent reflection at the interface is the key element to understand the spin transport. By completely solving the scattering problem based on first principles method, we obtained the spin resolved reflectivity spectra. The comparison of o
Rashba effect describes how electrons moving in an electric field experience a momentum dependent magnetic field that couples to the electron angular momentum (spin). This physical phenomenon permits the generation of spin polarization from charge cu
The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic parameter